Allicdata Part #: | FQPF6N40CF-ND |
Manufacturer Part#: |
FQPF6N40CF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 400V 6A TO-220F |
More Detail: | N-Channel 400V 6A (Tc) 38W (Tc) Through Hole TO-22... |
DataSheet: | FQPF6N40CF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | QFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 400V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 625pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 38W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
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FQPF6N40CF is a type of field-effect transistor (FET) characterized by its large current capacity and low on-resistance. It is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) with a single gate, meaning it functions as a single-pole, single-throw switch. The FQPF6N40CF translates a small input signal along the gate into a large output voltage between the drain and source. This provides a high current capacity with a very low on-resistance. It is often used in high-power switching applications and can operate over a wide temperature range.
The FQPF6N40CF is composed of three terminals: the gate, drain, and source. The gate functions as the input terminal, which typically carries a small positive or negative voltage. The positive voltage applied to the gate causes the channel to form between the drain and source. This allows current to flow from the drain to the source. Applying a negative voltage to the gate deactivates the channel, blocking current flow. The drain and source functions as two output terminals, voltage between the terminals will be determined by the voltage applied to the gate, and the current that can be supplied or sourced is determined by the size of the channel.
The FQPF6N40CF also has many important electrical characteristics that set it apart from other FETs. Its high on-resistance (RDS) gives it an extremely low gate charge and a fast switching speed, allowing it to switch quickly in various applications. Its high current capacity makes it ideal for high-power applications, such as motor control, solar power conversion, and audio power amplifiers. It also has a low input capacitance, reducing switching losses and improving efficiency. Its extended temperature range makes it suitable for extreme temperature environments.
The FQPF6N40CF is most commonly used in high-power systems. Due to its low on-resistance, high current capacity, and fast switching speed, it is used in a variety of power switching applications. It is also used in audio power amplifiers, motor control, solar inverters, LED lighting, and other high-power systems. Additionally, its extended temperature range makes it suitable for extreme temperature environments.
In summary, the FQPF6N40CF is an advantageous FET for high-power applications due to its low on-resistance, high current capacity, and fast switching speed. It can be used in a variety of systems such as audio power amplifiers, motor control, and solar inverters, as well as extreme temperature environments. It has excellent electrical characteristics, which make it a desirable choice for various power switching applications.
The specific data is subject to PDF, and the above content is for reference
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