FQPF7N65C_F105

Series:	QFET®
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650V
Current - Continuous Drain (Id) @ 25°C:	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.4 Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	36nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1245pF @ 25V
FET Feature:	--
Power Dissipation (Max):	52W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220F
Package / Case:	TO-220-3 Full Pack

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FQPF7N65C_F105 is a high current and low on-state resistance N-channel power MOSFET, which is specifically designed for use in switchmode power supplies and DC to DC converters. The device features very low on-state resistance, which optimizes conduction losses. It has fast switching speed, which reduces switching times and increases system efficiency. It also has good thermal stability, which makes it suitable for a wide range of applications including power supplies, battery protection/chargers, and DC to DC converters.In this article, we will discuss the application fields and working principle of the FQPF7N65C_F105.The FQPF7N65C_F105 is mainly used in DC to DC converters and switchmode power supplies. It is typically used in applications where high-current conduction and low on-state resistance is required. It can also be used in battery protection/charging circuits, solar/automotive application, UPS, DC/DC conversion, and low voltage process control for high voltage applications.A power MOSFET is a type of field-effect transistor (FET), and the FQPF7N65C_F105 is a single type power MOSFET. It consists of several electrical components such as a source, gate, and drain, which are made from silicon. The source is the input or starting point for the electrons, and the drain is the output or ending point for the electrons. The gate is the control element for the electrons, and it is where the voltage is applied to control the flow of electrons.When a voltage is applied to the gate of the FQPF7N65C_F105, it creates an electric field. This electric field attracts the electrons from the source to the drain and creates an inversion layer between the source and the drain. This inversion layer increases the conductivity between the source and the drain and allows the current to flow through the circuit.The working principle of the FQPF7N65C_F105 is based on this concept. The source of the transistor is connected to the voltage source and the drain is connected to the load. When a voltage is applied to the gate, the electric field is created, which attracts the electrons from the source to the drain and creates an inversion layer. This allows the current to flow through the device. This type of operation reduces the switching time and increases system efficiency by optimizing conduction losses.The FQPF7N65C_F105 is a very versatile device and it can be used in a variety of applications. It is commonly used in DC to DC converters and switchmode power supplies where high-current conduction and low on-state resistance is needed. It is also used in battery protection/charging circuits, solar/automotive applications, UPS, DC/DC conversion, and low voltage process control for high voltage applications.In conclusion, the FQPF7N65C_F105 is a high current and low on-state resistance N-channel power MOSFET specifically designed for use in switchmode power supplies and DC to DC converters. It is commonly used in a variety of applications owing to its fast switching speed and good thermal stability. It has the ability to reduce conduction losses and increase system efficiency. Its working principle is based on the concept of creating an electric field between the source and the drain, which attracts electrons from the source to the drain and creates an inversion layer.

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