FQPF22P10 Allicdata Electronics
Allicdata Part #:

FQPF22P10-ND

Manufacturer Part#:

FQPF22P10

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 100V 13.2A TO-220F
More Detail: P-Channel 100V 13.2A (Tc) 45W (Tc) Through Hole TO...
DataSheet: FQPF22P10 datasheetFQPF22P10 Datasheet/PDF
Quantity: 1859
Stock 1859Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 125 mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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The FQPF22P10 is a commonly used MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) which has many diverse applications. It is a surface-mount enhancement-mode device, meaning that no gate bias is necessary to make it start conducting. MOSFETs are widely used in consumer electronics, in particular as switches and amplifiers, and the FQPF22P10 is no exception.

The FQPF22P10 has a drain-source voltage rating of 30V, and an On-state current (Ids) of 22A at a temperature of 25°C. It is a N-channel device, meaning current flows between the drain and source when the gate voltage is greater than a threshold voltage. This makes it suitable for use as a switch, where the gate voltage can be used to control the drain-source current. This is used, for example, for strobing displays, for controlling the power output of amplifiers, and for switching multiple transistors simultaneously.

The FQPF22P10 has a low gate threshold voltage (Vgs) of 1.5V, making it suitable for use even with very low power supply voltages. This makes it suitable for use in ICs (Integrated Circuits), where the working voltage is generally quite low. It also has a low drain-source capacitance of 15pF at Vgs = 0V, making it very fast to switch when compared to other transistors. This is particularly useful when using the FQPF22P10 as a switch, where fast switching times can be desired.

The FQPF22P10 is a very versatile MOSFET and can be used in a wide variety of applications. As previously mentioned, it can be used as a switch, typically operated using a microcontroller or a pulse-width modulator. It can also be used as an amplifier where it can be used to control the power output of a circuit, for example in a car audio system. It is also very useful as a current source, where its ability to switch quickly can be used to provide a relatively constant current or voltage, even if the input voltage or current varies significantly.

The FQPF22P10 also has many advantages over other types of transistors. It is faster switching, meaning that it can be used for high speed applications. It also requires less current for operation and has a lower on-resistance, meaning that it can be used for applications which require a higher current flow. Its low gate-threshold voltage also makes it more suitable for use with low power circuits.

In conclusion, the FQPF22P10 is a very useful MOSFET with a wide variety of applications. Its low threshold voltage and low drain-source capacitance make it suitable for use in low voltage IC circuits, while its high current and low on-resistance make it suitable for switching or amplifying high-current applications. Its fast switching also makes it suitable for use in high-speed applications.

The specific data is subject to PDF, and the above content is for reference

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