Allicdata Part #: | FQPF3N50C-ND |
Manufacturer Part#: |
FQPF3N50C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 3A TO-220F |
More Detail: | N-Channel 500V 3A (Tc) 25W (Tc) Through Hole TO-22... |
DataSheet: | FQPF3N50C Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | QFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 365pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
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The FQPF3N50C is a high voltage MOSFET (metal-oxide-semiconductor field-effect transistor) with an on-resistance of only 3 ohms and a maximum drain current of 50A. This makes it suitable for many applications, including motor control, high voltage switching, and power conversion.
The FQPF3N50C is a single N-type MOSFET, which means that it has a gate electrode that carries a negative charge. When a positive voltage is applied to the gate, a negative voltage is created at the source, which attracts electrons and allows current to pass through the device. This is called the MOSFET threshold voltage. The MOSFET also has an on-state resistance, which is the resistance path when the device is “fully on”, and an off-state resistance, which is the resistance path when the device is “fully off”. The higher the voltage applied to the gate, the lower the on-state resistance will be and the higher the current will be able to pass through the MOSFET.
The maximum drain current of the FQPF3N50C is 50A and the maximum on-state resistance is only 3 ohms. This makes it very suitable for applications that require high voltage, such as motor control, high voltage switching, and power conversion.
In motor control applications, the FQPF3N50C is used to control the current and speed of the motor. A pulse width modulation (PWM) signal is applied to the MOSFET to control its output. The PWM signal varies the on-state resistance of the MOSFET, which in turn varies the amount of current that passes through it and the speed of the motor. By adjusting the frequency and duty cycle of the PWM signal, the motor can be controlled precisely.
In high voltage switching applications, the FQPF3N50C is used to control the current flow in an inductive load. This can be used to run high voltage electronics, as well as starting and stopping motors. The MOSFET can be used to control the current flow in both directions, which can help to reduce power consumption and improve efficiency.
In power conversion applications, the FQPF3N50C can be used to precisely control the amount of current passing through the conversion circuit. This can be used for applications such as DC-AC inverters, DC-DC converters, and AC-DC converters. The low on-state resistance and high maximum drain current make the FQPF3N50C ideal for these types of applications.
The FQPF3N50C is an ideal device for a wide variety of applications that require high voltage and low on-state resistance. It is capable of precisely controlling both current and voltage and can be used for applications such as motor control, high voltage switching, and power conversion.
The specific data is subject to PDF, and the above content is for reference
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