FQPF11N40T

Series:	QFET®
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	400V
Current - Continuous Drain (Id) @ 25°C:	6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	480 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1400pF @ 25V
FET Feature:	--
Power Dissipation (Max):	50W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220F
Package / Case:	TO-220-3 Full Pack

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FQPF11N40T is a special type of Field Effect Transistor (FET) that is designed to be used in many different applications. It is a single terminal, N-channel MOSFET, meaning that its source and drain connections are on opposite ends of the device. The FQPF11N40T is designed for low voltage and high current applications, such as those involving power supplies, high frequency switching, and communications systems.The main advantage of the FQPF11N40T is its low on-state resistance. This allows for more energy efficiency in applications that require lots of current. The FQPF11N40T has high breakdown voltage and is capable of sustaining high drain current over a wide range of temperatures. It also features a linear transfer characteristic, meaning that the drain current is proportional to the drain-source voltage (Vds).The FQPF11N40T has many potential applications. It is commonly used in PWM, step-down and step-up switching power supplies, as well as in high frequency and voltage boosting circuits. It can also act as a protection device, as it can handle large current and has a low on-state resistance. This makes it ideal for over-current and short-circuit protection.The working principle of the FQPF11N40T is fairly straightforward. When a gate voltage is applied to the FQPF11N40T, it causes a channel to be created between the source and drain. This channel is what allows the current to flow from the source to the drain. The amount of current that is allowed to flow through the channel is determined by the gate voltage. As the gate voltage increases, the current through the channel increases. In other words, the FQPF11N40T acts as a voltage-controlled switch.The FQPF11N40T is also designed to have low capacitance and a fast switching speed, making it a great choice for use in high frequency applications. It also has a low gate-to-drain capacitance (Cgd), allowing it to be used in applications where fast switching speed is desired.Overall, the FQPF11N40T is a versatile device that can be used in many different applications. It is especially useful for applications that require high current and low on-state resistance. Additionally, its features such as low capacitance and fast switching speed make it a great choice for high frequency applications.

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