FQPF12N60T

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The FQPF12N60T is a type of power metal-oxide field effect transistor (MOSFET) in the N-channel, 1200 V, 60 A family. This power MOSFET is specifically designed for high-speed switching applications.

MOSFETs are transistors typically used for the switching or amplification of electronic signals. FQPF12N60T is designed with a high-speed switching feature that can effectively reduce the power loss associated with switching operations. This device is especially suitable for high-frequency applications.

FQPF12N60T structure is a vertical discrete MOSFET with gate, drain- and source-terminal featuring high voltage levels of 1200 volts and a maximum drain current of 60 A. It also has a low on-resistance of 0.5-1.5 mΩ, which reduces conduction losses; a low gate charge to minimize switching losses; and an ultra-low drain-source capacitance to provide fast switching times.

Applications of FQPF12N60T include boost converters, rectifier circuits, SMPS, and high voltage DC/DC converters, just to name a few. These power MOSFETs are also useful in audio amplifiers, motor drives, and battery chargers/power supplies.

The working principle of FQPF12N60T involves the passage of charge carriers, either electrons or holes, through the channel between drain- and source terminal. The voltage at the gate terminal controls this channel. When a positive voltage is applied to the gate of FQPF12N60T, the channel is activated and (for an N-type transistor) the electrons are allowed to flow from the source to the drain. This can cause current to flow through the drain- and source-terminal of the transistor.

The efficiency of FQPF12N60T can be attributed to its low on-resistance, gate charge and low gate capacitance. The low on-resistance minimizes power losses due to current flow through the device while the low gate charge reduces the amount of charge needed to open the MOSFET and increase the switching times. The low gate capacitance reduces the gate-to-drain and gate-to-source capacitance, which helps in improving the frequency response of the device, thus making it suitable for use in high-frequency applications.

In conclusion, FQPF12N60T is a power MOSFET specifically designed for high-speed switching applications such as rectifier circuits, boost converters, audio amplifiers, motor drives and other power supplies. It is characterized by a low on-resistance, low gate charge, and low gate capacitance, which give this MOSFET an excellent high-frequency response. This, along with its 1200 V rating, makes FQPF12N60T an ideal choice for high-speed, high-voltage switching operations as well as medium-voltage operations.

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