FQPF7N10

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	23W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	250pF @ 25V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	7.5nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	350 mOhm @ 2.75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	5.5A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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<p>The FQPF7N10 is a field-effect transistor (FET) specifically designed for use in voltage-sensing applications. It is a single, N-channel, insulated-gate FET (IGFET) with a maximum drain current of up to 5A. This FET is designed to be used in applications that require high-performance power switching and can withstand higher drain-to-source voltage (VDS) ratings than other FETs.</p><p>The FQPF7N10 is a very versatile device, as it can be used for voltage-sensing applications requiring high frequency response and can also be used in a wide range of load conditions with its drain-to-source voltage (VDS) ratings of up to 60V. Its low drain-to-source on-state resistance (RDSon) also makes it suitable for power-switching applications.</p><p>The FQPF7N10 functions as a voltage-sensing device. It has two main characteristics: a gate voltage (VGS) and a drain-to-source voltage (VDS). When a voltage is applied to the gate (VGS) of the device, it will begin to conduct. This results in a current flowing from the drain to the source (I D ). The amount of current that will flow depends on the voltage applied to the gate (VGS) and the drain-to-source voltage (VDS), and is

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