Allicdata Part #: | FQPF3P20-ND |
Manufacturer Part#: |
FQPF3P20 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 200V 2.2A TO-220F |
More Detail: | P-Channel 200V 2.2A (Tc) 32W (Tc) Through Hole TO-... |
DataSheet: | FQPF3P20 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 32W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 2.7 Ohm @ 1.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQPF3P20 is a single-slot insulated gate field-effect transistor (INSETFET) and it is one of the most common types of FETs available today. The FQPF3P20 is a N-channel, depletion-mode transistor that utilizes an insulated gate to control current flow. This FET device has a variety of application fields and can be used in numerous electronic circuits and designs. This article will explore the application fields and working principle of the FQPF3P20.
Application Fields
The FQPF3P20 is commonly found in power-management circuits such as those used in high-end, high-power systems. It is also used in amplifier circuits, low-current circuits, and many other types of power control applications. The FQPF3P20 also has an advantage of having a smaller size and lower power consumption than other FET types, thus making it suitable for a variety of applications where a small footprint is desired.
The FQPF3P20 can also be used to provide switching for digital logic circuits. This FET can provide a fast, low-power switching solution for digital logic applications. The FQPF3P20 is also used in medical electronics, industrial automation systems, and communication systems.
Working Principle
The FQPF3P20 utilizes an insulated gate to control current flow through its semiconductor channel. When a voltage is applied to the gate, the semiconductor channel is created, allowing electrons to flow between the source and drain. The amount of current that flows is determined by the size and shape of the semiconductor channel and the voltage applied to the gate. When the voltage is removed, current will no longer flow, and the channel will be shut off.
The FQPF3P20 is typically used to create a path for current to flow from source to drain, allowing a device to be switched on or off. In this manner, the FQPF3P20 can be used for power control, amplifier circuits, and digital logic applications. By changing the size of the channel or applying various voltages, the FQPF3P20 can be used to create various circuit functions.
Conclusion
The FQPF3P20 is a single-slot insulated gate field-effect transistor (IGFET) that is used in a variety of electronic circuits and systems. The FQPF3P20 is used in power-management circuits, amplifier circuits, and digital logic applications. The FQPF3P20 utilizes an insulated gate to control the current between the source and drain. Thus, by changing the size of the channel or applying various voltages to the gate, the FQPF3P20 can be utilized to create various circuit functions.
The specific data is subject to PDF, and the above content is for reference
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