FQPF3N90 Allicdata Electronics
Allicdata Part #:

FQPF3N90-ND

Manufacturer Part#:

FQPF3N90

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 900V 2.1A TO-220F
More Detail: N-Channel 900V 2.1A (Tc) 43W (Tc) Through Hole TO-...
DataSheet: FQPF3N90 datasheetFQPF3N90 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 43W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 4.25 Ohm @ 1.05A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FQPF3N90 is a high voltage, high speed power MOSFET field-effect transistor (FET). It is specifically designed to operate in power switching applications such as inverters, motor control and general power switching applications.

The FQPF3N90 is a N-channel enhancement mode MOSFET. It has a Vdss of 900 V, a Rds of 1.3 m-ohm, and a gate to source voltage of +/- 10 V. The maximum drain current is 82 A and the maximum drain source voltage (Vds) is 960 V. The total gate charge of the FQPF3N90 is 33 nC.

The main application field of the FQPF3N90 is high voltage, high speed power switching applications. It is used in motor control in automobiles, power inverters, AC/DC converters, and high frequency power switches.

The working principle of the FQPF3N90 is similar to that of any other FET. It has two terminals, the source (S) and the drain (D). A voltage is applied to the gate (G) terminal which creates an electric field across the gate oxide. This electric field generates a “channel” of charge carriers that extends from source to drain. The voltage applied to the gate controls the current flow from source to drain. When the voltage applied to the gate is increased, the current flow is increased as well.

When the voltage applied to the gate is decreased, the current flow is decreased. This decrease in current flow is known as the “off-state”. The FQPF3N90 is able to provide high speed switching due to its low gate to source voltage of +/- 10 V and its low total gate charge of 33 nC.

The FQPF3N90 offers superior performance compared to its competitors as it has a high voltage capability of 900V and a high current capability of 82 A. It is also able to provide fast switching speeds and a low total gate charge. This makes it the ideal choice for high voltage, high speed power switching applications.

In conclusion, the FQPF3N90 is a high voltage, high speed power MOSFET designed for power switching applications. It has a Vdss of 900 V, a Rds of 1.3 m-ohm, and a gate to source voltage of +/- 10 V. The total gate charge of the FQPF3N90 is 33 nC. It is mainly used in motor control in automobiles, power inverters, AC/DC converters, and high frequency power switches.

The specific data is subject to PDF, and the above content is for reference

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