Allicdata Part #: | FQPF3N90-ND |
Manufacturer Part#: |
FQPF3N90 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 2.1A TO-220F |
More Detail: | N-Channel 900V 2.1A (Tc) 43W (Tc) Through Hole TO-... |
DataSheet: | FQPF3N90 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 43W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 910pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 4.25 Ohm @ 1.05A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.1A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQPF3N90 is a high voltage, high speed power MOSFET field-effect transistor (FET). It is specifically designed to operate in power switching applications such as inverters, motor control and general power switching applications.
The FQPF3N90 is a N-channel enhancement mode MOSFET. It has a Vdss of 900 V, a Rds of 1.3 m-ohm, and a gate to source voltage of +/- 10 V. The maximum drain current is 82 A and the maximum drain source voltage (Vds) is 960 V. The total gate charge of the FQPF3N90 is 33 nC.
The main application field of the FQPF3N90 is high voltage, high speed power switching applications. It is used in motor control in automobiles, power inverters, AC/DC converters, and high frequency power switches.
The working principle of the FQPF3N90 is similar to that of any other FET. It has two terminals, the source (S) and the drain (D). A voltage is applied to the gate (G) terminal which creates an electric field across the gate oxide. This electric field generates a “channel” of charge carriers that extends from source to drain. The voltage applied to the gate controls the current flow from source to drain. When the voltage applied to the gate is increased, the current flow is increased as well.
When the voltage applied to the gate is decreased, the current flow is decreased. This decrease in current flow is known as the “off-state”. The FQPF3N90 is able to provide high speed switching due to its low gate to source voltage of +/- 10 V and its low total gate charge of 33 nC.
The FQPF3N90 offers superior performance compared to its competitors as it has a high voltage capability of 900V and a high current capability of 82 A. It is also able to provide fast switching speeds and a low total gate charge. This makes it the ideal choice for high voltage, high speed power switching applications.
In conclusion, the FQPF3N90 is a high voltage, high speed power MOSFET designed for power switching applications. It has a Vdss of 900 V, a Rds of 1.3 m-ohm, and a gate to source voltage of +/- 10 V. The total gate charge of the FQPF3N90 is 33 nC. It is mainly used in motor control in automobiles, power inverters, AC/DC converters, and high frequency power switches.
The specific data is subject to PDF, and the above content is for reference
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