FQPF33N10

Series:	QFET®
Packaging:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	52 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	51nC @ 10V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	1500pF @ 25V
FET Feature:	--
Power Dissipation (Max):	41W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220F
Package / Case:	TO-220-3 Full Pack

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Introduction

FQPF33N10 is a surface mountable, fast switching N-Channel MOSFET with a high power density. It is generated by using advanced design techniques and highly optimized process. The FQPF33N10 features very low capacitance and low switching times. This product is capable of very low power dissipation and high blocking voltage ability. This device is manufactured using advanced technology from the Fairchild family of MOSFETs.

Application Field

FQPF33N10 is mostly utilized in battery operated devices, power amplifiers and E-fuse applications. Due to its low input capacitance and fast switching times, it is especially suitable for high speed data transmission in ultra short times. It is capable of handling very large current demands with its high power density. Furthermore, due to its large current carrying capability, it is also suitable for power supplies, hot swap applications, motor drives and solar converters.

Working Princple

FQPF33N10 offers superior performance when compared to traditional MOSFETs. It runs on a single voltage source that controls the flow of current passing through the device. When the voltage is sufficiently high, the gate-source voltage of the FQPF33N10 will overcome source resistance and drain-source resistance, allowing current to flow through the device. The switching current in FQPF33N10 can be manipulated by adjusting the voltage of the gate terminal.FQPF33N10 utilizes a Gate-Threshold Voltage (VTS) and a Gate Resistance (Rg) for controlling the flow of current passing through the device. When the voltage is sufficiently high, the Gate-Threshold Voltage (VTS) will exceed the Gate Resistance (Rg) and current to flow through the channel, making the device in a conducting state. When the voltage drops below the Gate-Threshold Voltage (VTS), the current through the FQPF33N10 device will be switched off.

Conclusion

FQPF33N10 is an advanced and very efficient MOSFET device that is suitable in a wide range of applications. Due to its high power density, low input capacitance and fast switching times, it is especially suited for high speed data transmission and high current applications. It utilizes a Gate-Threshold Voltage (VTS) and a Gate Resistance (Rg) in order to control the flow of current passing through the device.

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