Allicdata Part #: | FQPF12N60-ND |
Manufacturer Part#: |
FQPF12N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 5.8A TO-220F |
More Detail: | N-Channel 600V 5.8A (Tc) 55W (Tc) Through Hole TO-... |
DataSheet: | FQPF12N60 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 2.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.8A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQPF12N60 is an advanced, low-voltage enrichment MOSFET. It can be used in high-current, high-speed and high-voltage applications. This high-performance device offers a wide range of features, including low input capacitance for a wide range of output current ratings, strong on-state performance, and high-frequency operation up to 500 MHz. Because of its many features, FQPF12N60 is ideal for a wide range of industrial, communications and consumer applications.
In general, it is used as a switching transistor in power electronic circuits where fast switching and high voltage clamping are required. Furthermore, it is often employed in industries such as motor control, robotics, power supplies, and audio applications. In particular, it excels at switching applications requiring low input resistance and low gate-source capacitance because of its low input capacitance and low gate-source capacitance.
The FQPF12N60 operates as a depletion-mode MOSFET, in which the main parameter is gate voltage. As gate voltage increases, the channel resistance decreases, which allow current to flow from source to drain. At the same time, gate capacitance also decreases, making the device faster and more reliable. Thus, the gate voltage determines the drain current, and can be controlled to a certain level by adjusting the gate voltage.
In addition, the FQPF12N60 also provides a low-voltage turn-on feature, which is beneficial in applications which require high-voltage operation. This feature also allows the device to be used in linear as well as switching applications. Despite its extraordinary features and capabilities, the FQPF12N60 is still relatively inexpensive compared to other power MOSFETs.
The FQPF12N60 also features a low threshold voltage, allowing it to remain in the on-state when the gate voltage is low. This ensures that the device will not be damaged by excessive gate-source voltage, making it more reliable and safer. Furthermore, the FQPF12N60 features a low junction capacitance, which is helpful in high-frequency applications.
The FQPF12N60 also provides a low-source resistance, which is important for improving system performance. By reducing the drain-to-source voltage, the device can reduce power consumption and improve system efficiency. Finally, the FQPF12N60 is also resistant to electrostatic discharge, making it suitable for high-reliability applications.
The wide range of features and capabilities of the FQPF12N60 make it an ideal choice for a wide range of power electronic applications. It offers high performance with low input capacitance and low source resistance, while being able to withstand high-voltage operation. Furthermore, its low junction capacitance, low threshold voltage, and ESD protection make it robust and reliable, making it suitable for a wide range of applications. Overall, the FQPF12N60 is an excellent choice for high-current, high-speed, and high-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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