Allicdata Part #: | FQPF27N25T-ND |
Manufacturer Part#: |
FQPF27N25T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 250V 14A TO-220F |
More Detail: | N-Channel 250V 14A (Tc) 55W (Tc) Through Hole TO-2... |
DataSheet: | FQPF27N25T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2450pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQPF27N25T is an N channel low voltage field-effect transistor (FET) which is notable for its high power efficiency, low gate and drain capacitance, and steady current flow. It is packaged in a small surface mount package which is suitable for use in electronic applications where the space for the package is at a premium. This low voltage FET is used in a wide range of applications from power amplifiers and high power motor control to variable frequency drives, invertors, buck, boost and buck/boost converters. In general, this FET is suitable for switching, power factor correction and power regulation.The FQPF27N25T features low on-resistance (RDS (on)) and low threshold voltage (VGS (th)) since it is built using advanced high voltage trench technology. Its compact size and high reliability make it suitable for numerous applications such as motor control, power audio amplifiers, variable frequency drives, invertors, buck, boost and buck/boost converters.The FQPF27N25T is a type of field-effect transistor (FET) which uses the field of the gate electrode to control the current flow from the source to the drain electrode, allowing for the switching of electrical signals between the two end points. This type of transistor operates using a principle whereby electrons in the gate electrode’s field are repelled by electric fields, causing a ‘depletion region’ to be created, or a ‘channel’. This enables current to flow between the source and drain electrodes, making the FET a type of switch. The FQPF27N25T, specifically, makes use of a N-channel FET with a structure that is ‘enhancement mode’, meaning it is normally open, and requires a positive voltage to be applied to the gate electrode in order to close it.The FQPF27N25T is commonly used in a variety of power switching applications. One of the key advantages of using this type of FET over traditional semiconductor devices such as bipolar transistors is its significantly lower power losses, its very low gate charge, and its very low input/output capacitance. This allows for considerable energy savings when used in power electronic devices, applications where space is limited, and switching signals at high-frequencies. It can also be used in advanced motor control systems, and has a high current rating for demanding applications.In summary, the FQPF27N25T is an enhancement mode N channel FET which is designed for use in a wide variety of high power and low voltage applications such as power amplifiers, motor control, and switching applications. Its compact size and low power losses make it a suitable choice for many demanding applications. It features low on resistance and low input/output capacitance which allows for significant energy savings and reduced power losses. In addition, its high current rating makes it suitable for more advanced motor control systems. In general, this FET provides an efficient and reliable power switching solution for a wide range of power electronic applications.
The specific data is subject to PDF, and the above content is for reference
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