Allicdata Part #: | FQPF5N50CTTU-ND |
Manufacturer Part#: |
FQPF5N50CTTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 5A TO-220F |
More Detail: | N-Channel 500V 5A (Tc) 38W (Tc) Through Hole TO-22... |
DataSheet: | FQPF5N50CTTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 625pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQPF5N50CTTU is a N-channel transistor that belongs to the family of Field-Effect Transistors (FETs). It is a type of single (Implied) lateral MOSFET, and is used in many practical applications such as power supply switching, audio amplifier repairs and protection circuits.
MOSFET transistors have three main terminals: the drain, gate, and source. The FQPF5N50CTTU has a drain-source voltage rating of 500 Volts (V), with a drain current of 5A and an RDS-on of 1.2 Ohm. It is also characterized by a continuous drain current, maximum resistance of 0.9 Ohm and a package of TO-220AB.
This type of transistor works based on the principle of a three-terminal, controlled-current device. It is composed of a channel of semiconductor material (in this case, silicon) that is connected between two other electrodes or terminals. When a voltage is applied across the gate-source terminals of the FQPF5N50CTTU, a conductive channel is formed between the drain and source. This is known as the "on" state and allows electrical current to flow through the MOSFET and is the basic mechanism behind FETs.
The FQPF5N50CTTU can be used in a variety of applications and is ideal for applications such as power supplies, audio amplifiers, and protection circuits. It is a highly efficient device due to its low on-resistance RDS-on value. Furthermore, it can handle large currents, making it ideal for a variety of power supply switch and amplifier repair applications.
For power supplies, the FQPF5N50CTTU is ideal for switching applications due to its low on-resistance value and low power usage. It is capable of switching power with relatively low power loss, making it highly efficient. Additionally, the low on-resistance value allows for better heat dissipation and improved thermal control.
In addition to power supply switching and audio amplifier repairs, the FQPF5N50CTTU can also be used in protection circuits. For instance, it can be used to protect against over-voltage, under-voltage, and over-current conditions. Furthermore, it is an ideal choice for high power switching applications due to its low on-resistance and ability to handle large currents.
Furthermore, the transistor features a low gate-source threshold voltage, which allows for easy triggering and allows for fast switching applications. This helps to reduce power losses in applications such as power supplies and amplifiers by decreasing switching times.
In conclusion, the FQPF5N50CTTU is a highly efficient and powerful N-channel MOSFET transistor designed for switching and protection circuits. It is characterized by a low on-resistance, high current capabilities and short switching time, making it ideal for power supply and audio amplifier repairs. Additionally, its low gate-source threshold voltage makes it suitable for fast switching applications.
The specific data is subject to PDF, and the above content is for reference
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