FQPF19N20T

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FQPF19N20T is an advanced low-threshold N-Channel MOSFET (Metal Oxide Silicon Field-Effect Transistor) in TO-220 package, which is primarily designed for use in high power applications. It is engineered with N-doped drain and source channels and uses planar stripe construction where the source is connected to the gate through a shorted turn. FQPF19N20T can operate at breakdown voltage as high as 30 volts and its drain-source breakdown voltage is rated at 20 volts.

The application field of FQPF19N20T is mainly focus on high-power, fast switching applications such as lighting, audio, switching power supplies, high-power DC/DC converters and motor control inverters. With the maximal current rating of 19A and RDS(on) rate of 0.4 Ω, FQPF19N20T can sustain fast switching in low-side applications. It also has low switching losses, high-frequency operation capability, and excellent avalanche capability, allowing efficiency gains and diminished total power consumption. Based on its rating, FQPF19N20T can be used to drive large resistive and capacitive loads in high-powered systems. Furthermore, FQPF19N20T also has reverse blocking capability to provide the systems extra protection.

In operation, FQPF19N20T works by applying a low-voltage independent control signal to the gate which induces a channel between the source and drain regions of the MOSFET. This forms the ON/OFF state which interconnects the two regions and provides the most efficient circuit performance. The induced channel is usually referred to as the power density and is created by the device\'s gate oxide structure and external bias voltage applied. The RDS(on) of FQPF19N20T is a measure of the power density of the induced channel and is proportional to the current throughput of the circuit. The lower the RDS(on), the better the performance and efficiency.

FQPF19N20T provides excellent switching performance with minimal gate charge and low gate-to-drain capacitance. This makes it ideal for use in high-frequency and high-speed switching applications. Furthermore, its low on resistance over temperature range makes it an attractive option in applications which require low RDS(on). By using FQPF19N20T, the user can benefit from improved circuit efficiency as well as lower power consumption.

FQPF19N20T can be easily integrated into a variety of designs. It can be used in either discrete, parallel, or series configurations depending on the application. This flexibility allows it to be utilized in a variety of applications and enables designers to quickly and easily switch to a single version when needed. Additionally, FQPF19N20T is RoHS-compliant, making it an attractive option for green designs in many industries.

In conclusion, FQPF19N20T is a versatile and cost-effective low-threshold N-Channel MOSFET. It provides excellent switching performance and low on-resistance over temperature range while offering reverse blocking capability and excellent power density. With its high junction temperature ratings, it is suitable for use in high-power, fast switching applications in many industries. Furthermore, FQPF19N20T is compliant with RoHS standards, making it an attractive option for green designs.

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