FQPF1N60

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	21W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	150pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	6nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	11.5 Ohm @ 450mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	900mA (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQPF1N60 is a power MOSFET from Fairchild semiconductors. It belongs to the family of single gate, Field-Effect Transistors (FETs), with a N-channel enhancement mode. This type of transistor is commonly used in high current switching and amplification applications, such as relays, solenoids, and motor controls.The FQPF1N60 is a type of Power MOSFET, meaning it is designed to handle large amounts of current and power, as opposed to other smaller Field-Effect Transistors. It is also built using a device structure known as a "vertical DMOS", which can handle higher currents and voltages than a standard MOSFET without compromising on performance.The FQPF1N60 is designed to be used in applications that require high-frequency switching and low conduction losses. This makes it an ideal choice for high-power switching, as it can handle large currents without incurring high losses.This specific MOSFET has an rated drain-source voltage of 600V, a drain-source on-state resistance of 0.4 ohms, and a drain current rating of 7A. It also has a gate threshold voltage rating of 1.5V and can switch frequencies of up to 6 MHz. The FQPF1N60 also has an avalanche energy rating of 7mJ, meaning it can absorb an energy spike of up to 7mJ without failure.FQPF1N60 also has high thermal resistance, with a maximum drain-source resistance of 111 degrees Celsius and a maximum junction temperature of 150 degrees Celsius. This makes it suitable for use in applications with high heat dissipation requirements.The FQPF1N60 has an on-state saturation voltage of 1.2V, meaning it can easily switch between on and off states with minimal power loss. This makes it an ideal choice for high-speed switching applications, as it can switch rapidly without incurring too much power loss.The FQPF1N60 is available in several packaging options, including surface-mount, through-hole and clip-mount. The surface-mount version is designed to be used in applications where space is at a premium, while the clip mount version is designed for applications where the FET will be used in multiple circuits.The working principle behind the FQPF1N60 is simple. When a voltage is applied to the gate of the transistor, the channel between the source and the drain is turned “on”, allowing a current to flow through the transistor. When no voltage is present, the channel will be turned “off”, and no current will flow.This makes the FQPF1N60 an ideal choice for amplification and switching applications. It can be used in relay circuits to control the flow of high currents (up to 7A) and can also be used to amplify small signals for use in control circuits. It is also an excellent choice for applications that require high-speed switching with minimal power loss.In conclusion, the FQPF1N60 is an ideal choice for applications that require high current and power handling capability. It is available in several packaging options and has excellent thermal resistance and switching speed. The working principle behind this device is simple, making it a great choice for use in both high-current and low-power applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description