FQPF30N06

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	39W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	945pF @ 25V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	25nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	40 mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	21A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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FQPF30N06 Application Field and Working Principle

The FQPF30N06 is a fast-switching, low-voltage power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Fairchild Semiconductor Corporation. This power MOSFET is used in many applications ranging from small, portable devices such as mobile phones, to large-scale industrial motors and computer server farms. The FQPF30N06 serves as an interface between low voltage digital logic and the high voltage switching circuits.

Features of the FQPF30N06

The FQPF30N06 is built on a specialized high-voltage, low-threshold process. This allows it to easily handle operating voltages up to 30V while drawing very little power. The FQPF30N06 features an internal fast-switching power MOSFET which helps reduce the complexity of the circuit design and speeds up the switching process. The FQPF30N06 also comes with a built-in electrostatic discharge protection. The built-in ESD protection helps to limit the potential damage to the chip caused by an unexpected voltage spike.

Applications of the FQPF30N06

The FQPF30N06 is ideal for applications which need to switch high voltages quickly and efficiently. Due to its low voltage capabilities, it is especially popular in applications such as mobile phones, PDAs and industrial automation. Other common applications include LEDs, LCDs and RFID (Radio Frequency Identification) applications.The FQPF30N06 can also be used in conjunction with other devices to protect against situations such as overloads, over-heating and short circuits. In such cases, the FQPF30N06 can be used to quickly and reliably switch off the power to the connected devices. This helps to protect the rest of the circuit from potential damage.

Working principle of the FQPF30N06

The FQPF30N06 utilizes the principles of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) to switch power. MOSFETs are a type of transistor which works by using an electric field to control the flow of electrons between the source and the drain. In the case of the FQPF30N06, the electric field is generated when a voltage is applied between the gate and the source of the chip. When the gate voltage is below the threshold voltage, the MOSFET remains off; however, when the gate voltage reaches the threshold voltage, the MOSFET turns on, allowing the current to flow between the source and the drain.The FQPF30N06 also features built-in electrostatic discharge protection, which helps to protect the chip and the rest of the circuit against unexpected voltage spikes. This is done by quickly switching off the power whenever a large voltage surge is detected.

Conclusion

The FQPF30N06 is a fast-switching, low-voltage power MOSFET from Fairchild Semiconductor Corporation. It is ideal for applications which need to switch high voltages quickly and efficiently, and it is especially suitable for mobile phones, PDAs and industrial automation. In addition, the FQPF30N06 also features built-in electrostatic discharge protection, which helps to protect the chip and the rest of the circuit against unexpected voltage spikes.

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