Allicdata Part #: | 1560-1156-5-ND |
Manufacturer Part#: |
GP1M003A080FH |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 800V 3A TO220F |
More Detail: | N-Channel 800V 3A (Tc) 32W (Tc) Through Hole TO-22... |
DataSheet: | GP1M003A080FH Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 32W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 696pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.2 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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GP1M003A080FH is a FET, or Field Effect Transistor, used in a variety of electronic applications. It is a single, n-channel enhancement-mode MOSFET, which is used to switch and control loads in applications such as motor control, power conversion, and power supplies. This device is also suitable for use with high-frequency switching for high-speed switching applications.The GP1M003A080FH is a type of enhancement-mode MOSFET, which means that it requires an externally applied voltage to turn it on. The device has three terminals, called the source, drain, and gate. A charge applied to the gate causes an electric field to form near the metal-oxide semiconductor interface, altering the conductivity between the two terminals. This creates an electrically controlled resistor between the drain and source, allowing current to flow between the two electrodes.The FET’s switching capabilities are optimized for a wide range of frequency applications. It has a peak drain-source breakdown voltage of 80–180V and a drain-source on-resistance of 160–400 mΩ, making it suitable for high-frequency switching applications. Additionally, the device can handle transient voltages of up to 600V and can be used with frequency up to 400MHz. It is also capable of withstanding very high currents of up to 10A.The GP1M003A080FH is also a very efficient device. Its low thermal resistance, low gate-source capacitance and low gate-drain capacitance make it a good choice for improving power efficiency of circuits. The device operates over a wide temperature range of -55°C to +175°C, allowing it to be used in very cold or hot environments.When using the GP1M003A080FH, one thing to keep in mind is that the device operates between two states. It is either fully on or off, unlike other transistors which may have a linear range of operations. This makes it suitable for digital circuits, but not necessarily ideal for analog applications.The GP1M003A080FH has many advantages over other types of transistors, such as its compatibility with high-frequency switching applications and its capability for handling very high currents. Additionally, it is efficient and reliable, making it a great choice for many different types of applications.Overall, the GP1M003A080FH is a great choice for high-frequency switching applications and is a reliable, efficient device. It can handle large currents, withstand transient voltages, and operate over a wide temperature range, making it ideal for all types of applications.
The specific data is subject to PDF, and the above content is for reference
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