GP1M020A060M

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	347W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2097pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	76nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	330 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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GP1M020A060M is a MOSFET produced by the Toshiba semiconductor. The GP1M020A060M part is a type of single FET (field effect transistor). This type of transistors has many applications, such as amplifiers and switching circuits. In this article, we will explore the role of GP1M020A060M MOSFET in different applications, its working principle and other important parameters associated with its. Applications:The GP1M020A060M power MOSFET can be used in many applications such as high efficiency switch mode power supplies and power amplifiers. It can be used as a switch for controlling high voltage circuits, it can also be used as a voltage regulator. The GP1M020A060M power MOSFET can also be used in logic circuits and audio circuits, such as audio amplifiers, tone control circuits and other similar applications. Working Principle:The GP1M020A060M is a MOSFET (metal-oxide-semiconductor field effect transistor). MOSFETs are characterized by three regions: source, drain and gate. When voltage is applied to the gate, it creates an electric field that attracts electrons from the source to the drain. This produces a current called the drain current, which is controlled by the voltage applied to the gate. The drain current is increased by increasing the gate voltage, and it is decreased by decreasing the gate voltage. This is the working principle of the MOSFET. Important Parameters Associated With GP1M020A060M Transistor:When selecting a GP1M020A060M power MOSFET, the following parameters should be kept in mind:• Drain-Source Voltage (VDS): This is the maximum voltage between the drain and source. • Drain Current (ID): This is the maximum current that can flow between the drain and source. • Gate-Source Voltage (VGS): This is the maximum voltage between the gate and source. • Drain-Source On-State Resistance (RDS(on)): This is the maximum resistance between the drain and source when the MOSFET is on. • Power Dissipation (PD): This is the maximum amount of power dissipated by the MOSFET. • Operating Temperature Range (TJ): This is the minimum and maximum temperature range within which the MOSFET will work. Conclusion:The GP1M020A060M is a MOSFET produced by the Toshiba semiconductor. It can be used in many applications, such as high efficiency switch mode power supplies and power amplifiers. The working principle of the MOSFET is based on the attraction of electrons from the source to the drain when voltage is applied to the gate. When selecting a GP1M020A060M power MOSFET, important parameters such as drain-source voltage, drain current, gate-source voltage and power dissipation must be kept in mind.

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