GP1M009A050FSH

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	39W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1195pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	24nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	850 mOhm @ 4.25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8.5A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Overview

The GP1M009A050FSH is a type of Field Effect Transistor (FET) specifically designed for use in industrial, automotive and consumer applications. This type of transistor is used in applications that require high power switching capabilities, such as switching inductive loads and motor drive circuits. The GP1M009A050FSH is a single-channel MOSFET that is capable of handling up to 50A at 12V. It has a high operating temperature of 175°C, making it suitable for a variety of operating conditions. The GP1M009A050FSH has an on-state resistance (R DS) of 9mΩ and a maximum gate-source voltage of 30V.

Application Field

The GP1M009A050FSH is primarily used in applications that require high power switching capabilities. This type of transistor is able to handle high currents and voltages, making it suitable for a wide range of industrial, automotive and consumer applications. For example, it is often used as a part of motor drive circuits, as well as in other applications that require high-power switching such as power supplies or power converters. In addition, it is also used in automotive applications, such as relays and ignition systems.

Working Principle

The GP1M009A050FSH is a type of field effect transistor, which means that it works based on the principle of an electric field. The transistors acts as a switch, allowing or blocking electrical current depending on the amount of voltage applied to the gate (G) terminal. When the voltage applied to the G terminal is equal to or greater than a certain threshold voltage (V TH), the transistor is said to be “on” and is allowing current to flow. In contrast, when the voltage applied to the G terminal is less than the V TH, the transistor is said to be “off” and no current is allowed to flow.The GP1M009A050FSH can be used to switch both AC and DC signals. When used with an AC signal, the gate voltage must be adjusted to maintain the device in either the “on” or “off” state. This is often done using a variable resistor, which can be adjusted to change the gate voltage. When used with a DC signal, the gate voltage is typically held at a constant level, either by using a resistor or by using a more complex circuit. This allows the transistor to remain in either the “on” or “off” state until the voltage is changed.

Advantages

The GP1M009A050FSH has many advantages over other types of transistors. It has a high operating temperature of 175°C, which makes it suitable for a variety of operating conditions. In addition, it is able to handle large currents and voltages, making it an ideal choice for power applications. Its low on-state resistance (R DS) of 9mΩ also means that it has a higher efficiency than other transistors, resulting in greater power savings.

Conclusion

The GP1M009A050FSH is a single-channel MOSFET that is ideal for use in applications that require high power switching capabilities. It is able to handle large currents and voltages, and its high operating temperature of 175°C makes it suitable for a variety of operating conditions. Its low on-state resistance also means that it has a higher efficiency than other transistors, resulting in greater power savings.

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