GP1M008A080H

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GP1M008A080H is a type of Field-Effect Transistor (FET) manufactured by Good-Ark Electronics in Taiwan. It is a silicon N-channel Enhancement-Mode Metal Oxide Semiconductor FET (MOSFET) suitable for switching and amplification applications. It is a single FET that is highly reliable and includes a unique gate turn-off feature that makes it well-suited for switching circuits.

A FET is a type of transistor made up of a source electrode, a drain electrode and a gate electrode. The source and drain electrodes are formed from a semiconductor material. The gate electrode is insulated from the semiconductor material by a thin dielectric layer. FETs are a type of field-effect transistor (FET) which is a type of transistor that uses an electric field to control the flow of current between source and drain terminals. The voltage applied to the gate electrode effectively changes the resistance between the source and the drain and thereby controls current flow through the device.

The GP1M008A080H has a maximum drain-source voltage of 800V and a maximum drain current of 8A. Its gate threshold voltage is -1V. Its on-state resistance is 8mΩ. Its operating temperature range is -55 to 150°C. It has an open drain type output configuration with a schottky diode protection. It has a continuous drain-source voltage of 800V and is available in a TO-220 package.

The working principle of the GP1M008A080H is based on the MOSFET structure and operation. This FET consists of a source electrode, a drain electrode and a gate electrode. The source and drain electrodes are formed from a semiconductor material and the gate electrode is insulated from it by a thin dielectric layer. When voltage is applied between the source and drain, an electric field is created in the depletion region around the gate. This electric field affects the conductivity of the semiconductor material between the source and drain, thereby controlling the flow of current between them.

It is typically used in applications such as power switching, driving motors, dimmers, speed controllers and more. It can also be used in other circuits and systems as an amplifier and buffer. It is commonly used in automotive, industrial, and consumer electronics projects.

The GP1M008A080H is an ideal device for applications that require a low-cost, high-frequency N-channel enhancement mode transistor with a high on-state resistance. It is reliable and versatile, and its high peak drain current and gate turn-off feature make it well-suited for switching circuits and other applications.

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