GP1M008A025PG Allicdata Electronics
Allicdata Part #:

1560-1166-5-ND

Manufacturer Part#:

GP1M008A025PG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Global Power Technologies Group
Short Description: MOSFET N-CH 250V 8A IPAK
More Detail: N-Channel 250V 8A (Tc) 52W (Tc) Through Hole I-PAK
DataSheet: GP1M008A025PG datasheetGP1M008A025PG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 423pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The GP1M008A025PG is an enhancement type single N-Channel MOSFET, a type of transistor built on an extended wide range of vertical and horizontal products. With the purpose of carrying out a variety of applications, it is one of the most widely used MOSFETs in the market. The main functionality of this item is to serve as an electronic switch that turns flow current on or off. Its long lifetime reliability allows for it to be used in devices such as diodes, rectifiers, and amplifiers, in order to exchange electrical signals.

The GP1M008A025PG is a MOSFET with a 25V drain source breakdown voltage and a 0.008 Ohm maximum RDS(on). It is rated as an 8A maximum current device, which can be used in circuits that require high current values. With proper heatsinking, this transistor can withstand a power up to 80W. Additionally, it has a low gate-charge operation, allowing for it to be powered up instantly.

The GP1M008A025PG is mainly used in surface mount designs. Its small, low-profile construction makes it an ideal candidate for many applications where space is limited, including for example, in robotic assembly systems and 3D printers. Moreover, it can be used as a control element in a variety of linear and switching power supplies, as well as in audio amplifiers. In order to ensure that it continuously works properly, it needs to be mounted in a surface hole with a corresponding stiffener.

The operation principle of the GP1M008A025PG is simple. It uses a gate voltage to control the current flow between the drain and the source. When the gate is at 0V, the MOSFET is “off” and no current will flow through it. However, a gate voltage higher than the threshold voltage (VGS(th)) will cause the gate to be “on”, allowing current to flow between the drain and the source. Furthermore, the voltage supply on the gate will determine the resistance between the drain and the source, i.e the RDS(on) value.

In conclusion, the GP1M008A025PG is an excellent choice for applications where small size and great power performance is required. It can be used in many different applications, from power supplies and robot controls to diodes and amplifiers. Its long lifetime reliability and quick response time makes it a useful device for many electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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