Allicdata Part #: | GP1M005A050FH-ND |
Manufacturer Part#: |
GP1M005A050FH |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 500V 4.5A TO220F |
More Detail: | N-Channel 500V 4.5A (Tc) 32W (Tc) Through Hole TO-... |
DataSheet: | GP1M005A050FH Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 32W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 627pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.65 Ohm @ 2.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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GP1M005A050FH is a type of single FET (field effect transistor) which belongs to a family of transistors known as MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors). In this type of transistor, an electric field is used to control the behaviour of the current flow. This enables the transistor to perform efficient switching and amplification operations.
The GP1M005A050FH single FET is a high-frequency, high-power transistor designed mainly for switching, and amplifier applications. It is a P-channel device, which means that it is for functions requiring negative logic (high-low operation of the logic circuitry). The FET is capable of supporting up to 50V and sourcing up to 5A of current, making it ideal for medium-power applications.
The main characteristic of a FET is its low input resistance; the output resistance of an FET can be made extremely low, which results in very low power dissipation. Also, FETs can be operated in high frequencies due to their low capacitance values. This makes the GP1M005A050FH suitable for high-frequency switching applications.
The working principle of the GP1M005A050FH single FET is relatively simple. It consists of three terminals: the source, the drain and the gate. The source and drain are used to supply the current. When the device is off (or not conducting), the gate is left open, and no current is able to flow through the FET. In order to turn the FET on (or start the current flow), voltage is applied to the gate; this creates an electric field which forces the charge carriers (electrons and holes in this case) to flow between the source and drain. By altering the gate voltage, the amount of current flowing through the FET can be controlled.
Due to its high switching capability, the GP1M005A050FH single FET is suitable for a wide range of applications. It can be used in audio amplifiers, power supplies, motor control circuits, as well as switching control applications. The FET can also be used as a high-speed switch in RF (radio frequency) circuits, as its switching characteristics are ideal for remote control systems.
In conclusion, the GP1M005A050FH single FET is a versatile and reliable component, capable of performing an array of operations. Its high-power characteristics and high-frequency performance make the device suitable for a range of application fields. It is a robust and reliable transistor which is sure to provide consistent performance even in challenging environments.
The specific data is subject to PDF, and the above content is for reference
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