Allicdata Part #: | 1560-1162-5-ND |
Manufacturer Part#: |
GP1M006A070FH |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 700V 5A TO220F |
More Detail: | N-Channel 700V 5A (Tc) 39W (Tc) Through Hole TO-22... |
DataSheet: | GP1M006A070FH Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 39W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.65 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 700V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The GP1M006A070FH is a type of power MOSFET transistor that can be used in a variety of applications. The device is designed to provide a high current switching capability with low on-resistance and low gate drive power. This enables designers to achieve high efficiency and fast switching speeds in their electronic designs. In this article, we will discuss the application field and working principle of the GP1M006A070FH.
Application Field
The GP1M006A070FH is designed for use in a variety of applications, such as load and line switching, Class-D audio amplifiers, DC-DC converters, and other high-side and low-side switching applications. It is suitable for use in a wide range of switching and amplifier circuits, and in applications where a high current switching capability with low on-resistance and low gate drive power is needed.
Working Principle
The GP1M006A070FH is a MOSFET transistor. MOSFET stands for “metal-oxide-semiconductor field-effect transistor,” and it is a type of transistor that is based on the field-effect principle. In a field-effect transistor, the gate voltage is used to control the current between two terminals. Unlike other transistors, MOSFET transistors do not require a current to control the flow of current, which makes them very efficient. In the case of the GP1M006A070FH, the gate voltage is used to control the current between the drain and the source terminals.
When the gate voltage of the GP1M006A070FH reaches a certain threshold voltage, the device will turn on and allow current to flow between the drain and source terminals. This device also has an extremely low on-resistance of 0.06Ω, which makes it very efficient as it requires very little energy to turn on. In addition, it has a low gate drive power of 1.5W, which further reduces power consumption when the device is in use.
The GP1M006A070FH is a versatile device that can be used in a variety of applications. Its high current switching capability and low on-resistance make it ideal for applications where efficiency and speed are important. In addition, its low gate drive power makes it ideal for applications where power consumption is a concern.
The specific data is subject to PDF, and the above content is for reference
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