| Allicdata Part #: | 1560-1165-5-ND |
| Manufacturer Part#: |
GP1M007A090H |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Global Power Technologies Group |
| Short Description: | MOSFET N-CH 900V 7A TO220 |
| More Detail: | N-Channel 900V 7A (Tc) 250W (Tc) Through Hole TO-2... |
| DataSheet: |  GP1M007A090H Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 250W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1969pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 49nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.9 Ohm @ 3.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
| Drain to Source Voltage (Vdss): | 900V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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GP1M007A090H is a type of single MOSFET (Metal Oxide Semiconductor Field Effect Transistor), which is a kind of three-terminal field effect transistor with a gate electrode on the gate oxide layer of a P-type semiconductor. The device features four kinds of characteristics. A particular application field and working principle will be discussed in the following.
GP1M007A090H, as a single MOSFET, has an isolation construction and can realize an efficient switch control. Thus, it is commonly used in low-frequency buck or boost circuits, or in other power applications. Generally, the switching period could not be as quick as that of an IGBT (Insulated Gate Bipolar Transistor), but its efficiency and high voltage handling abilities still make it widely applied in automotive motor control, servers, low-voltage adapter, on-board charger, audio amplifier and power supply. In particular, due to its lower threshold, GP1M007A090H is especially suitable for circuits with lower operating voltage as well as low-power circuit design. Moreover, it is available in both through-hole and surface-mount packages, providing extended design flexibility.
As for its working principle, the gate of GP1M007A090H needs an appropriate gate bias to control the channel through inversion layer. And the threshold should be lower so that the gate bias can drive the MOSFET on or off depending on the state of the gate bias alone. In fact, when the GP1M007A090H works normally, the P-channel device requires a negative bias at the gate. On the other hand, when the voltage applied at the gate is positive with regard to the source, then it functions as an open-drain output, in which case any excess current is discharged and the drain is pulled to a low voltage state. In this sense, the P-channel MOSFET provides the opposite control logic as that of a N-channel MOSFET.
GP1M007A090H supports a variety of well-defined functions, ranging from simple to complex. For one thing, its functions range from motor control, AC/DC conversion and switching-mode power supply to communications. Moreover, its topology can be simplified to a single transistor, a diode, and a capacitor. It mainly is used to efficiently control the conduction time of the power switch, thus achieving the purpose of power conversion. Additionally, it enables operation at a maximum frequency of several hundred kHz, simultaneously saving space, power and cost while increasing power conversion efficiency. It also exhibits a very low switch-on resistance, especially when compared to bipolar junction transistors and other field effect transistors.
In conclusion, GP1M007A090H is a type of single MOSFET, which is mainly used for motor control, AC/DC conversion, switching-mode power supply and communications with an isolation construction, lower threshold and switch-on resistance. With a wide range of well-defined functions, it can efficiently control the conduction time of the power switch, thus achieving the purpose of power conversion.
GP1M007A090H, as a single MOSFET, has an isolation construction and can realize an efficient switch control. Thus, it is commonly used in low-frequency buck or boost circuits, or in other power applications. Generally, the switching period could not be as quick as that of an IGBT (Insulated Gate Bipolar Transistor), but its efficiency and high voltage handling abilities still make it widely applied in automotive motor control, servers, low-voltage adapter, on-board charger, audio amplifier and power supply. In particular, due to its lower threshold, GP1M007A090H is especially suitable for circuits with lower operating voltage as well as low-power circuit design. Moreover, it is available in both through-hole and surface-mount packages, providing extended design flexibility.
As for its working principle, the gate of GP1M007A090H needs an appropriate gate bias to control the channel through inversion layer. And the threshold should be lower so that the gate bias can drive the MOSFET on or off depending on the state of the gate bias alone. In fact, when the GP1M007A090H works normally, the P-channel device requires a negative bias at the gate. On the other hand, when the voltage applied at the gate is positive with regard to the source, then it functions as an open-drain output, in which case any excess current is discharged and the drain is pulled to a low voltage state. In this sense, the P-channel MOSFET provides the opposite control logic as that of a N-channel MOSFET.
GP1M007A090H supports a variety of well-defined functions, ranging from simple to complex. For one thing, its functions range from motor control, AC/DC conversion and switching-mode power supply to communications. Moreover, its topology can be simplified to a single transistor, a diode, and a capacitor. It mainly is used to efficiently control the conduction time of the power switch, thus achieving the purpose of power conversion. Additionally, it enables operation at a maximum frequency of several hundred kHz, simultaneously saving space, power and cost while increasing power conversion efficiency. It also exhibits a very low switch-on resistance, especially when compared to bipolar junction transistors and other field effect transistors.
In conclusion, GP1M007A090H is a type of single MOSFET, which is mainly used for motor control, AC/DC conversion, switching-mode power supply and communications with an isolation construction, lower threshold and switch-on resistance. With a wide range of well-defined functions, it can efficiently control the conduction time of the power switch, thus achieving the purpose of power conversion.
The specific data is subject to PDF, and the above content is for reference
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