Allicdata Part #: | 1560-1182-5-ND |
Manufacturer Part#: |
GP1M015A050FH |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 500V 14A TO220F |
More Detail: | N-Channel 500V 14A (Tc) 53W (Tc) Through Hole TO-2... |
DataSheet: | GP1M015A050FH Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 53W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2263pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 440 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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GP1M015A050FH is a high performance MOS FET (metal-oxide-semiconductor field-effect transistor). It is a single FET device, meaning it is only composed of a single MOS transistor. It is widely used in different applications, ranging from radio frequency (RF) power amplifiers and switchers to industrial automation and robotics.
The GP1M015A050FH has a high breakdown voltage of 30V and a low on-resistance of 15Ω - making it suitable for use as a power switch in circuits with high power levels or high switching frequencies. It can also be used to control the flow of current in motors and other applications that require fast switching times.
The GP1M015A050FH has a wide operating temperature range of -40°C to +175°C, making it suitable for use in a wide range of environmental conditions. It also has a high transistor yield (RDSon), which means it delivers a consistent and reliable performance. The device also uses minimal power consumption, meaning it can be used for energy-efficient applications.
The GP1M015A050FH works by controlling the flow of current between the source and the drain in a circuit. A positive voltage applied to the gate will cause a current to flow from the source to the drain. This current is controlled by the amount of voltage applied to the gate, making the device suitable for use as an amplifier or a switch in a circuit.
The GP1M015A050FH is a highly efficient and versatile device that is capable of performing a wide range of tasks. It is suitable for applications such as motors, robotics and industrial automation that require fast switching and accurate current control. It can also be used as an amplifier or a switch in RF power amplifiers and other RF circuits.
The GP1M015A050FH is a reliable and efficient device that is capable of tackling demanding and complex tasks. Its high breakdown voltage and low on-resistance make it suitable for applications with high power levels, while its wide operating temperature range and high transistor yield allow it to be used in a variety of environmental conditions.
The specific data is subject to PDF, and the above content is for reference
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