GP1M016A060H Allicdata Electronics
Allicdata Part #:

1560-1187-5-ND

Manufacturer Part#:

GP1M016A060H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Global Power Technologies Group
Short Description: MOSFET N-CH 600V 16A TO220
More Detail: N-Channel 600V 16A (Tc) 290W (Tc) Through Hole TO-...
DataSheet: GP1M016A060H datasheetGP1M016A060H Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 290W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3039pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 470 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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GP1M016A060H is a single N-channel MOSFET chip with a maximum operation temperature of 150°C. It is mainly used in high voltage power switches and motor control applications, as well as in switching power supplies and communication equipment. This chip provides a high current, low VGS(th) and low gate charge, making it ideal for high power applications where switch speed and reliability are critical requirements.

This chip is comprised of N-channel MOSFETs, which are a type of field-effect transistor. A MOSFET is a type of voltage-controlled transistor that is used for a wide variety of electronic controlled applications. It is composed of two insulated or semiconducting layers of a material, typically silicon, separated by a thin layer of an insulating material. The two layers, known as the source and the drain, act as the two terminals of the MOSFET. A third terminal between the two layers is known as the gate. When a voltage is applied to the gate terminal, it causes the electric field to induce electrons within the channel in between the source and drain. This creates a current between the source and drain that can then be controlled by adjusting the voltage at the gate.

The main advantage of using a MOSFET compared to other types of transistors is its higher current capabilities and low on-resistance. This makes the chip attractive for use in high power, high voltage applications, as it is more efficient and reliable than other types of transistors. Additionally, the low gate charge makes the chip more suitable for fast switching applications. As a result, the chip can be used to control high power motor drives or switching power supplies.

The overallworking principle of the GP1M016A060H chip is relatively simple. First, a voltage is applied to the gate terminal of the MOSFET. This causes the electric field to induce electrons between the source and drain, thus creating a conductive channel between the two terminals. The current flowing between the source and drain can then be regulated by adjusting the voltage to the gate. The higher the voltage to the gate, the higher the current flowing through the channel. This makes the chip ideal for applications requiring high power with precise current control.

In conclusion, the GP1M016A060H is a single N-channel MOSFET chip with a maximum temperature of 150°C. It is used for high voltage power switches and motor control applications, as well as in switching power supplies and communication equipment. The chip provides a high current, low VGS(th) and low gate charge, making it ideal for high power applications. The main advantage of using a MOSFET compared to other types of transistors is its higher current capabilities and low on-resistance. The overall working principle of the chip is relatively simple, as voltage applied to the gate terminal of the MOSFET creates a current between the source and drain.

The specific data is subject to PDF, and the above content is for reference

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