GP1M003A080PH

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	94W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	696pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	19nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	4.2 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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GP1M003A080PH is an application field and working principle of a single metal oxide field effect transistor. It is a MOSFET with an integrated drain and source. This device is used to amplify electrical signals and to control both AC and DC current. The device\'s drain and source are connected in series, and its gate acts as a switch, allowing current to flow between the two when enough voltage is applied.The GP1M003A080PH is an enhancement-mode three-terminal device. That means that when no voltage is applied to the gate, no current flows through the device. When voltage is applied to the gate, this creates an electric field that enhances the channel, allowing current to flow from the source to the drain.The GP1M003A080PH\'s maximum drain current is up to 3A, and it can handle up to 100 watts of power. It is a highly efficient device and can switch between high- and low-current loads effortlessly. It also has a high-frequency operation capability, allowing it to respond quickly to rapid changes in electrical signals.The most common application of the GP1M003A080PH is in power MOSFETs. These are used to control electrical appliances such as TVs, computers, and home electronics, as well as motor control applications. They are also commonly used in motor control circuits and for gate driving applications. Other applications for this device include voltage-controlled amplifiers, power electronics, RF power amplifiers, and in industrial automation systems.The GP1M003A080PH is an easy-to-use device. It requires very little current to be driven into the gate, and it is designed to provide a very low on-state resistance to increase efficiency. It also has a very low threshold voltage, which is the minimum voltage required to initiate conduction in the device.This device has a variety of features that make it an ideal choice for many applications. It has a high-speed switching operation and can handle up to 100 watts of power. It is a highly efficient device and offers high-frequency operation capability. It is also cost-effective and has low on-state resistance.The GP1M003A080PH is a versatile device with many potential applications. It is used widely in many different areas, including power electronics, voltage-controlled amplifiers, motor control applications, gate driving applications, and even in industrial automation systems. It is an easy-to-use device, requires minimal current for operation, and is designed to provide very low on-state resistance. The GP1M003A080PH is an ideal choice for many applications that require fast switching and high-frequency operations.

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