Allicdata Part #: | 1560-1178-5-ND |
Manufacturer Part#: |
GP1M011A050FH |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 500V 11A TO220F |
More Detail: | N-Channel 500V 11A (Tc) 51.4W (Tc) Through Hole TO... |
DataSheet: | GP1M011A050FH Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 51.4W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1423pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 670 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The GP1M011A050FH is a type of single FET(Field Effect Transistor) that belongs to a family of switches, or transistors, known as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). FETs are three terminal devices composed of a source, a gate and a drain and when used as switching devices they are current limited rather than voltage limited.
FETs-based switches can be used either to amplify or otherwise condition a signal or to switch very fast on/off cycles to route or disconnect input signals or to draw power as required. Sources of FETs of the GP1M011A050FH type are particularly useful for AC/DC adaptors and switching power supplies.
The GP1M011A050FH MOSFET is a single N-Channel Enhanced Quad-Shunt FET that operates from a single +5V power supply. The FET has an rDS (ON) of 6.2 mW, gate charge of 9.9 nC and can provide up to a 570mA output current. It also has an output leakage current of 0.15W. The MOSFET also has a wide operating temperature range of -40ƒC to 150ƒC.
The GP1M011A050FH works on the principle of electrostatic depletion, whereby the field between the source and drain terminals is used to modulate an electrical current, and can be switched on/off by applying a control signal to the gate terminal. This is what makes it suitable as a switch because it can be used to turn a circuit on/off quickly and easily.
FETs of this type, such as the GP1M011A050FH, are used in a wide range of different applications. They are particularly useful in switching power supplies and AC/DC adaptors, where they are used to regulate the flow of current. Additionally, the GP1M011A050FH has been used to improve the hardness level of consumer products, such as car audio systems and parking sensors.
The GP1M011A050FH is an efficient, lightweight and high performing FET, and is widely used in a variety of applications. The FET works on the principle of electrostatic depletion and is capable of operating from a single +5V power supply. It can provide up to a 570 mA output current, has an output leakage current of 0.15W and is capable of operating over a wide temperature range of -40ƒC to 150ƒC. The GP1M011A050FH has been used to improve the hardness level of consumer products, such as car audio systems and parking sensors, and is also used in switching power supplies and AC/DC adaptors.
The specific data is subject to PDF, and the above content is for reference
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