GP1M016A025PG

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	93.9W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	944pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	19nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	240 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	16A (Tc)
Drain to Source Voltage (Vdss):	250V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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GP1M016A025PG is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a single-gate transistor and it has the designation of N (n-channel) or P (p-channel) to designate the type of channel. The GP1M016A025PG is an N-channel MOSFET that is used as an electronic switch or amplifier.MOSFETs are an important type of electronic component. MOSFETs are current-controlled devices, meaning the transistor can be turned on or off (switched) by applying a voltage to its gate terminal. The gate voltage determines the amount of current that flows through the device. The GP1M016A025PG has a low threshold voltage and a low total gate charge, making it well suited for applications where fast switching speeds are required.The GP1M016A025PG is used in a wide range of applications, including power management, automotive, industrial, and medical electronics. This transistor can be used to control high current loads, such as motor control applications, or to amplify signals. It can also be used in power supplies and other power-saving systems where energy efficiency is important. In addition, the GP1M016A025PG is suitable for use in linear and switching regulator designs.The working principle of the GP1M016A025PG is based on the basic MOSFET structure. When no voltage is applied to the gate electrode, the device will remain in an “off” state. When a voltage is applied to the gate, the transistor acts as an electronic switch and current can flow between its source and drain terminals. The amount of current flow is directly proportional to the magnitude of the gate voltage. The GP1M016A025PG uses a process called “Vt trim” which allows the threshold voltage to be adjusted depending on the application.In summary, the GP1M016A025PG is a versatile single-gate transistors used in a wide range of applications. Its low threshold voltage and fast switching speeds make it suitable for controlling high current loads and for power-saving designs. The working principle is based on the basic MOSFET structure and the Vt trim process allows the threshold voltage to be adjusted.

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