GP1M009A060FH

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The GP1M009A060FH is a small-signal MOSFET with a low on-resistance of 4.7 ohms, making it suitable for applications that require high efficiency. It has a maximum drain-source voltage rating of 60V and a drain current of 110mA. The GP1M009A060FH is widely used in low voltage control circuits and power electronics, as well as in audio preamps and power amplifiers.

MOSFETs, short for metal-oxide-semiconductor field-effect transistors (MOSFETs), are a type of power transistor used for switching and amplifying electrical signals, as well as for providing functionality and protection. Compared to other types of transistors, MOSFETs have high input and output impedance, low power consumption, and high switching frequency. This makes them a popular choice for applications requiring low noise, low power, and high performance.

The GP1M009A060FH works by using a metal gate as the control gate. When a control signal is applied to the gate, electrons are attracted through the metal-oxide gate dielectric. This attracts the gate of the MOSFET to negative voltages, the depth of which is controlled by the size of the voltage applied to the gate. As the gate voltage is increased, the source-to-drain resistance decreases, allowing current to flow between the source and the drain. This effect is known as enhancement mode. When the gate voltage is set to 0V, the MOSFET is in its off-state, meaning that current flow between the source and the drain is prevented.

The GP1M009A060FH is also capable of operating in its depletion mode. In this state, the source-to-drain resistance increases when the gate voltage is 0V. This decreases the current flow between the source and the drain. This can be used to regulate the amount of current flowing through the MOSFET by adjusting the gate voltage.

The GP1M009A060FH is an ideal choice for applications where low on-state resistance, high breakdown voltage, and low power consumption are required. It is commonly used in low voltage switching control circuits and audio preamps due to its low power consumption and high performance. It is also used in high efficiency power electronics for protection and functionality. It is suitable for automatic light dimmers and PWM speed controllers, as well as robotics and industrial applications.

The GP1M009A060FH is a reliable and cost-efficient MOSFET solution for applications requiring low on-resistance, high breakdown voltages, and low power consumption. Its combination of low power consumption, high performance, and compatibility with low voltage control circuits make it an ideal choice for a variety of applications. Its depletion mode capability also allows for precise control and regulation of current, making it an invaluable component in many power electronic circuits.

The specific data is subject to PDF, and the above content is for reference