Allicdata Part #: | GP1M009A050HS-ND |
Manufacturer Part#: |
GP1M009A050HS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 500V 8.5A TO220 |
More Detail: | N-Channel 500V 8.5A (Tc) 127W (Tc) Through Hole TO... |
DataSheet: | GP1M009A050HS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 127W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1195pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 4.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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GP1M009A050HS can be classified into transistors, FETs, MOSFETs and single. This type of device generally is known as a "power MOSFET." It is a four terminal device with a three terminal gate and a drain-source junction that when biased in the proper polarity and direction, a channel will be created between them. The channel forms in the source region and extends between the source and the drain terminals forming a conducting path.
The proper mode of operation of GP1M009A050HS requires two conditions to be met. First, an applied voltage must be greater than the threshold voltage or Vth and, second, the drain-source resistance (RDS) must be less than the gate-source resistance (RGS). When both of these conditions are met, GP1M009A050HS will be in its active region.
The main purpose of GP1M009A050HS is to control the flow of current from a higher voltage to a lower voltage. This is done by using the threshold switching of GP1M009A050HS which allows the gate-source voltage of the transistor to be controlled. When there is no voltage applied to the gate, the current between the source and the drain will be zero. When the underlying gate is charged, then the transistor will activate, allowing the current to flow through the channel.
The basic application field of GP1M009A050HS includes power networks, distributed power in communications, DC-DC controllers, alarm systems, power supplies and other industrial applications. It’s also useful in applications that require high gate current such as gate drivers for high-power switching ICs or high-power power applications.
Working with GP1M009A050HS is relatively safe and straightforward since it is designed to work within the range of 2 to 10 volts. This low voltage range decreases the chances of any static discharge from the device. It is designed to convert a low power signal into a higher power switched signal, allowing the device to act as a switching regulator.
In general, GP1M009A050HS is a powerful and versatile MOSFET due to its unique properties. Its application field covers a wide variety, from low power applications to high power applications, allowing it to be a useful tool in many different areas.
The specific data is subject to PDF, and the above content is for reference
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