GP1M012A060FH Allicdata Electronics
Allicdata Part #:

GP1M012A060FH-ND

Manufacturer Part#:

GP1M012A060FH

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Global Power Technologies Group
Short Description: MOSFET N-CH 600V 12A TO220F
More Detail: N-Channel 600V 12A (Tc) 53W (Tc) Through Hole TO-2...
DataSheet: GP1M012A060FH datasheetGP1M012A060FH Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 53W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2308pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The GP1M012A060FH is a metal oxide semiconductor field effect transistor (MOSFET) of the single type. It is compact in its form factor, and yet has a robust power capacity and is designed for low-noise electrical operation. It is well-suited for applications in a variety of industries ranging from consumer electronics to commercial vehicle systems.

The GP1M012A060FH MOSFET is exceptionally efficient, providing high-power electrical switching with very low on-resistance. This results in a reduction of heat output, making it an excellent choice for thermal management concerns. It can also be used in applications where power dissipation is an issue, due to its low on-resistance.

The GP1M012A060FH has a working principle based on operating voltage. In effect, the gate of the transistor is activated when the voltage at its gate exceeds a certain level. This control voltage is known as the gate-source threshold. This threshold is often used to control the current passing through the device. When a positive voltage exceeds the gate threshold, electrons are attracted to the gate, where they then constitute a channel for current flow. Conversely, when a negative voltage is applied to the gate, the electrons are repelled, which causes current flow to be cut off.

The GP1M012A060FH has a wide range of application fields in a variety of industries. In consumer electronics, it serves as an excellent power switch for controlling audio and video signals. It is also widely used in automotive power switching with its low on-resistance, making it an ideal choice for fuel pumps, engine control systems, and more. Additionally, the GP1M012A060FH can be used as a DC-DC converter in power systems and industrial machines. In sum, its low noise, low power dissipation and high reliability make it a versatile, high-performance choice for many applications.

To conclude, the GP1M012A060FH is a single type MOSFET that combines a low on-resistance with high-power capacity. It is specifically designed for low-noise electrical operation, making it an ideal choice for a variety of industries, including consumer electronics and automotive power switching. Its application fields range from audio and video signals to DC-DC converters and industrial machines, and its high performance and reliability make it an attractive choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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