| Allicdata Part #: | 1560-1172-5-ND |
| Manufacturer Part#: |
GP1M009A060H |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Global Power Technologies Group |
| Short Description: | MOSFET N-CH 600V 9A TO220 |
| More Detail: | N-Channel 600V 9A (Tc) 158W (Tc) Through Hole TO-2... |
| DataSheet: | GP1M009A060H Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 158W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1440pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1 Ohm @ 4.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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GP1M009A060H is a field effect transistor (FET) used in many electronic components and devices. It is a single MOSFET device which has its own distinguished characteristics compared to other similar types of transistors. It can deliver exceptional performance in different applications under different conditions and is used in wide range of electronics components and equipment including industrial, automotive, consumer and military applications.
The GP1M009A060H FET has an on-resistance of 0.6 ohms and a maximum drain current of 280mA. It can operate at temperatures ranging from -40°C to +175°C. Moreover, it has a wide range of safety features and can withstand maximum voltage of 800V. It is mainly used in switching, control, protection and amplification applications.
The working principle of the GP1M009A060H MOSFET transistor is simple. It consists of an insulated gate which is connected to the source of the device. This gate is always at a negative potential, which induces an electric field in the region surrounding it. This electric field then controls the conductivity of the channel region between the source and the drain of the device. When the gate voltage is increased, it increases the conductivity of this channel region, thus allowing the current to pass through it. Conversely, the gate voltage can be decreased to decrease the conductivity of the channel, thus blocking the flow of current.
The GP1M009A060H has several applications, such as in DC-DC converters, motor drives and power switching circuits. It is used as a switch in many power circuits since it can handle very large currents, as well as in applications where a high switching speed is required, such as in telecom circuits. In addition, it can be used as a linear amplifier or an impedance converter in many circuits. It is also used as a power amplifier, where it can deliver high power levels.
In summary, GP1M009A060H is a single MOSFET device with a wide range of applications and characteristics, including high on-resistance, high drain current, temperature range of -40°C to +175°C, maximum voltage of 800V and safety features. It is mainly used as a switch in power circuits, as a linear amplifier and as an impedance converter. It is also used as a power amplifier due to its high power levels. All in all, this transistor has the capacity to deliver exceptional performance under different conditions and is used in many different types of electronic components and equipment.
The specific data is subject to PDF, and the above content is for reference
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GP1M009A060H Datasheet/PDF