GP1M003A080H

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	94W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	696pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	19nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	4.2 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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GP1M003A080H is a type of single-gate MOSFET, also known as an enhancement-mode Field Effect Transistor (FET). It is designed for ultra low-voltage operations and constructed on a silicon substrate. This transistor consists of a source, a drain, and a gate lead between them. It has a high input resistance and low output resistance, and is typically used in high-power applications such as power supplies, motor control, and signal modulation.The main function of GP1M003A080H is to control the flow of electrical current. It is an ideal choice for power converters, power amplifier applications and high-speed switching applications in which high efficiency and low-power consumption are desired. It operates by using an induced gate-source voltage to control the flow of current through the gate. The voltage applied to the gate acts as a capacitor, allowing current to flow when it is applied and closing off when it is removed.GP1M003A080H is capable of providing high current gains, up to 200A, while keeping static and switching losses to a minimum. In order to achieve high frequency switching, the device is usually coupled with a heat sink to dissipate the heat generated by the MOSFET. The maximum power dissipation for this device is 2W, allowing for operating near enough to its maximum frequency rating.The working principle of GP1M003A080H is based on the gate-source capacitance. When a positive gate-to-source voltage is applied, electrons accumulate at the interface and form a channel between the source and the drain. As current flows through this channel, the voltage at the gate follows the voltage at the source. This forms an inversion layer between the source and the drain, which has a controlled resistance.The GP1M003A080H is ideal for high-frequency switching applications such as voltage converters, motor control, signal modulation, and high-speed switching. Its low static and switching losses ensure a significant energy savings. Its high current capacity and fast switching speed make it a very efficient transistor for power conversion and modulation applications. The device is also able to handle high-power input and output without losing its efficiency and is capable of working at temperatures as low as -40 degrees Celsius.The GP1M003A080H is considered to be an ideal choice for a wide variety of applications due to its high current gain, low static and switching losses, and high efficiency. It is highly reliable and durable, able to handle high-power input and output without any detriment to its performance or efficiency. This, together with its small size, makes it an ideal choice for integrated circuits, power supplies, and motor drives.

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