Allicdata Part #: | GP1M018A020FG-ND |
Manufacturer Part#: |
GP1M018A020FG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 200V 18A TO220F |
More Detail: | N-Channel 200V 18A (Tc) 30.4W (Tc) Through Hole TO... |
DataSheet: | GP1M018A020FG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 30.4W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 170 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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?GP1M018A020FG transistors are widely used in various industrial and home applications, providing high levels of performance and reliability. In this article, we will explore the application field and working principle of this type of transistor.
GP1M018A020FG transistors are part of the field-effect transistor (FET) family, specifically of the single MOSFET type. A MOSFET is a metal-oxide semiconductor field-effect transistor, which is a type of transistor that uses a metal-oxide gate instead of a gate terminal.
The single MOSFET type of FET is a three-pin device, consisting of a gate, source, and drain. The gate is the pin that regulates the flow of current between the source and drain, and is used to control the voltage on the drain of the device. The source is the pin from which the current flows out of the device, while the drain is the pin where the current is drawn back into the device.
This type of transistor is mainly used in power switching applications, such as in DC-DC converters or AC-DC rectification, since it is able to handle large currents and voltages. In addition, the device also has low output capacitance, making it suitable for high-speed switching applications.
The working principle of the GP1M018A020FG is based on the fact that the gate voltage modulates the threshold voltage of the MOSFET. When the gate voltage is higher than the threshold voltage, the transistor is in an ON state and allows current to flow through it. When the gate voltage is lower than the threshold voltage, the transistor is in an OFF state and does not allow any current to pass through.
When the device is in an OFF state, the gate-to-drain voltage will remain constant and independent of the gate-to-source voltage. This allows the device to be used in voltage-sensitive applications, such as pulse-width modulation circuits and power supplies.
In addition, the GP1M018A020FG can also be used in applications that require a wide range of input voltages. When the input voltage is higher, the transistor\'s source and drain capacitances will increase and its output impedance will decrease, allowing it to efficiently transfer large amounts of energy.
The GP1M018A020FG is an ideal choice for a wide range of applications, such as for high-frequency switching, high-power switching, power supply design, and DC-DC conversion. This type of transistor is widely used in the industrial and home automation sectors, due its high levels of performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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