GP1M003A050FG

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	17.3W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	395pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	9nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	2.8 Ohm @ 1.25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.5A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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GP1M003A050FG Application Field and Working Principle

The GP1M003A050FG is a general purpose single MOSFET device intended for use in power switching applications. The device features an On-Resistance of 500mΩ and a maximum drain current rating of 18A. It is an N-channel MOSFET rated at 30V, making it a perfect choice for low voltage applications.

GP1M003A050FG Features

The GP1M003A050FG features low on-resistance, high maximum drain current, and low gate-source threshold voltage. These features make it an ideal power switch for portable electronic devices and industrial control systems. It also offers a low profile package and fast switching speed, making it suitable for high-frequency applications.

GP1M003A050FG Application Fields

The GP1M003A050FG is a versatile MOSFET and as such it has a wide range of applications. Common uses for the device include:• DC-DC conversion• Motor control• Motor driver• Power supply sequencing• LCD backlighting• High side and low side switches• Power switch for power electronics

GP1M003A050FG Working Principle

The GP1M003A050FG is a N-channel MOSFET, which means that the current flow is bidirectional. When the gate voltage is greater than the threshold voltage, a channel is created and current flows through the channel, turning it on. The drain current is limited by the channel resistance, which is determined by the On-Resistance and the Gate-Source Voltage.When the gate voltage is less than the threshold voltage, the channel is cut off and the device is turned off. In this case, the drain current is reduced to a very low level. This feature allows for precise control of load current, making it ideal for power switching applications.

Conclusion

The GP1M003A050FG is a single MOSFET device, offering low On-Resistance and high maximum drain current rated at 30V. Its fast switching time and low profile package make it perfect for portable electronic devices and industrial control systems. Its versatile features make it suitable for a variety of applications, including motor control, DC-DC conversion and power switching for power electronics. Its N-channel operation allows for precise control of load current, making it ideal for switching applications.

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