Allicdata Part #: | GP1M006A065F-ND |
Manufacturer Part#: |
GP1M006A065F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 650V 5.5A TO220F |
More Detail: | N-Channel 650V 5.5A (Tc) 39W (Tc) Through Hole TO-... |
DataSheet: | GP1M006A065F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 39W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1177pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 2.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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GP1M006A065F is a Field Effect Transistor (FET) with single MOSFETs built-in. It is a P-channel MOSFET which can be used in a variety of applications, such as analog circuits, digital circuits, power management and so on. GP1M006A065F can be found in a variety of electronic devices, such as cell phones, computers, home appliances and other electronic products.
MOSFETs are voltage-driven devices and are well suited for use in a variety of signal-processing and power-conversion applications because of their low on resistance and input capacitance, as well as their ability to switch quickly. The key feature of MOSFET is that it allows for a larger range of voltage amplification and increased linearity, which make them ideal for high voltage outputs.
The working principle of the GP1M006A065F is similar to that of other FETs. It is a unipolar device and utilizes the "majority carrier" mechanism. In this type of device, a p-type semiconductor is sandwiched between two n-type semiconductors. The "majority carrier" is the type of charge carrier (electron or hole) that is more numerous in the region of the transistor. When a voltage is applied to the gate of the FET, the majority carrier is allowed to flow from the source to the drain. The greater the amount of majority carrier, the more current is allowed to flow. In this way, the FET can be used to regulate the current flowing through it.
The main application of the GP1M006A065F is analog circuits. It is commonly used as a variable current sink in various types of amplifiers, as well as other analog circuitry. In addition to its use in amplifiers, GP1M006A065F can be used to regulate the charging of batteries, light-emitting diode (LED) drivers and DC motor speed controls, as well as other circuit applications.
Another application of the GP1M006A065F is digital circuits. As a voltage-controlled device, it can be used to control digital logic signals. It is commonly used in digital logic circuits to control the flow of electrons between different nodes. GP1M006A065F can also be used in power management applications. For example, it can be used to regulate the current flowing through LEDs, as well as in other types of power conversion circuits.
In summary, the GP1M006A065F is a Field Effect Transistor (FET) with single MOSFETs built-in. It is a P-channel MOSFET and is commonly used in analog circuits, digital circuits and power management applications. The working principle of the GP1M006A065F is based on the “majority carrier” mechanism and the device can control the flow of charge carriers by altering the voltage applied to the gate. The main application of the GP1M006A065F is analog circuits, but it can also be used in other applications, including digital circuits and power management.
The specific data is subject to PDF, and the above content is for reference
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