GP1M010A060H

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	198W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1891pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	36nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	750 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	10A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

GP1M010A060H is a 60V N-channel enhancement-mode field-effect transistor (FET). This type of FET transistor has a wide range of applications, ranging from low-frequency switching applications, to high-speed switching and control applications. In the MOSFET family, the GP1M010A060H FET is one of the most versatile and commonly used FETs. The GP1M010A060H is an N-channel enhancement-mode FET, which is optimized to operate with a logic signal. It is ideal for controlling power in high-speed, high-current applications. Furthermore, the GP1M010A060H offers excellent power efficiency, low on-resistance, and low on-resistance variation. In the GP1M010A060H, N-channel designates the type of circuit and gate FET. This means that it has an N-type substrate, with the electron and hole carriers circulating in opposite directions, creating a stronger inversion channel with smaller voltage drops. This type of FET is characterized by its fast switching, low on-resistance, and low power consumption. In terms of construction, a GP1M010A060H consists of source and drain terminals, gate terminals, and package. The source and drain terminals are the switching points in a circuit, while the gate terminal is the control point, allowing voltage to turn the FET on or off. The package is the housing that houses the FET components. The GP1M010A060H operates according to the principle of operation. This FET operates in an enhancement mode, meaning that it requires an external voltage to turn on. When the gate terminal is exposed to a higher voltage than that on the drain, the electrons travel from the source to the drain, with few other impediments. This creates an inversion channel, also known as a conducting channel, allowing current to flow through the channel. When the gate voltage is lower than the drain voltage, the electrons can no longer travel freely. Thus, the channel is cut off, and the FET is in its cut-off region. This makes the FET ideal for switching applications, as it can be easily turned on or off with a control voltages. This decreases power consumption and reduces the need for large transistors.In terms of application fields, the GP1M010A060H is commonly used in a variety of applications. It is perfect for switching in low-frequency circuits, as it is optimized to operate with a logic signal. In addition, the GP1M010A060H is also used in high-speed switching applications that require fast switching, such as logic-level load switches, power supplies, and other consumer electronics. It is also suitable for switching in high-current applications, such as LCD TVs, automotive systems, and audio amplifiers. Overall, the GP1M010A060H is one of the most versatile FETs in the MOSFET family. It is optimized to operate with a logic signal, and offers excellent performance in terms of switching speed, current handling capabilities, and power efficiency. In addition, it is commonly used in a wide range of applications, ranging from low-frequency switching, to high-speed switching and control applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description