Allicdata Part #: | GP2M002A065HG-ND |
Manufacturer Part#: |
GP2M002A065HG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 650V 1.8A TO220 |
More Detail: | N-Channel 650V 1.8A (Tc) 52W (Tc) Through Hole TO-... |
DataSheet: | GP2M002A065HG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 353pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.6 Ohm @ 900mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The GP2M002A065HG is a high-voltage N-channel MOSFET that acts as an electric switch. It is an enhancement-type metal-oxide-semiconductor field-effect transistor (MOSFET) that is optimized for high-voltage and low resistance on-off operations. In its simplest form, the MOSFET is equivalent to an on-off switch, with a little bit of extra finesse. It is a type of MOSFET that works by using an electric field to control the flow of current in a circuit.
The GP2M002A065HG is used in a variety of applications. It is often found in audio amplifiers, DC-DC converters, and power supplies. The MOSFET can also be used as a variable resistor, allowing the user to control the amount of current in a circuit. This type of MOSFET is also popularly used in motor control circuits, as it can be easily paired with a motor driver chip or motor controller.
The working principle of the GP2M002A065HG is based on the field-effect transistor (FET) phenomenon. A MOSFET is a type of FET that is optimized for high-voltage and low on-resistance applications. The FET works by utilizing the basic properties of a semiconductor material. The source, drains and gate are the main components of the FET. When a voltage is applied to the gate, it creates an electric field that modulates the resistivity of the channel between the source and drain. The gate current is then proportional to the current through the channel, which is also proportional to the voltage applied.
The GP2M002A065HG is an improvement to the basic FET formula, using several advanced design processes. The channel length is shorter than conventional MOSFETs, which allows the current to flow more rapidly and with less resistance. The package uses the latest technology to improve heat dissipation and reduce voltage drop. The construction process also includes a silicide layer over the gate, which improves the drive and withstand performance.
The GP2M002A065HG is a high-voltage, low on-resistance MOSFET suitable for various applications. Its optimized design and construction processes make it an effective electric switch. The working principle is based on the field-effect transistor (FET) phenomenon, and uses the properties of a semiconductor material to control the current flow in a circuit. It is suitable for audio amplifiers, DC-DC converters and motor control circuits, and provides an efficient and reliable way to control the current in a circuit.
The specific data is subject to PDF, and the above content is for reference
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