Allicdata Part #: | GP2M008A060FG-ND |
Manufacturer Part#: |
GP2M008A060FG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 600V 7.5A TO220F |
More Detail: | N-Channel 600V 7.5A (Tc) 39W (Tc) Through Hole TO-... |
DataSheet: | GP2M008A060FG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 39W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1063pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 3.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The GP2M008A060FG is a power MOSFET technology that can be used for a wide range of applications. It is classified as single, so it is only one device with one part. This type of technology is suitable for providing power in high temperatures and high currents. It is also capable of providing fast switching and allows for higher conductivity than other MOSFET technologies. This makes it ideal for a variety of electronic applications including inverters switches, power supplies, and audio amplifiers. In this article, we will discuss the GP2M008A060FG application field and working principle in more detail.
Application Field
The GP2M008A060FG is mainly used in applications that require high voltage, high speed, and high current. It is particularly useful in power supplies, inverters, and audio amplifiers. The device can handle up to 60V and is capable of switching up to 30 amps. This makes it ideal for use in high power applications. It is also suitable for controlling high-frequency signals, as it has low on-state resistance and a fast switching operation. This device can also be used for controlling high frequency circuits for applications such as mobile phones, digital cameras, and various other electronic devices.
Working Principle
The GP2M008A060FG is an insulated-gate FET (IGFET) that works on a voltage-controlled principle. The device consists of an insulated gate, source, and drain as well as a field control gate. The field gate is connected to a voltage source and when activated, it modulates the existing electric field across the gate and between the source and drain. This electric field affects the conductivity between the S and the D, thereby allowing current to flow. The field gate can affect the voltage threshold, and when this voltage is lower than the threshold voltage, the device is switched off. The device also has a high current capacity, making it suitable for many applications.
The GP2M008A060FG also features a low input capacitance, high current capacity, and low voltage drop, making it very efficient and suitable for a wide range of applications. The device is also capable of operating in harsh environmental conditions, making it ideal for use in automotive, industrial, and commercial applications. The device can also be used in high temperature applications, as it has an outstanding temperature coefficient.
The GP2M008A060FG is an excellent all-round device for providing reliable power, current control, and protection in a variety of applications. Its wide voltage and current range, fast switching, and high reliability makes it an ideal choice for many applications. It is particularly suitable for use in high-frequency and harsh environmental applications, and can be used in a wide range of electronic applications.
The specific data is subject to PDF, and the above content is for reference
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