Allicdata Part #: | GP2M002A065CG-ND |
Manufacturer Part#: |
GP2M002A065CG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 650V 1.8A DPAK |
More Detail: | N-Channel 650V 1.8A (Tc) 52W (Tc) Surface Mount D-... |
DataSheet: | GP2M002A065CG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 353pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.6 Ohm @ 900mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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MOSFETs, which stands for metal–oxide–semiconductor field-effect transistors are an integral component in many electronic products and methods. GP2M002A065CG is a power amplifier MOSFET from Fuji Electric. This paper covers the application fields and working principles of GP2M002A065CG MOSFET.
GP2M002A065CG Application Fields
The GP2M002A065CG from Fuji Electric is a transistor designed for high-efficient power amplifiers, often used for driving loudspeakers, acting as an audio power booster, or enabling motor control. Such applications require a powerful MOSFET.
The GP2M002A065CG MOSFET is suitable for digital communication wireless communication devices, mobile phones, VTR digital video recorders, computer peripheral equipment, satellite radio, radio-controlled model cars, TV digital set-top boxes, alarm systems, and industrial control devices. It is also used in speaker drive and power DC-DC converters.
GP2M002A065CG Working Principle
MOSFETs are semiconductor devices with four terminals connected to a semiconductor, usually silicon. When electricity is applied to the gate terminal, it controls the flow of current between the source and drain terminals. This is known as the transistor effect, and it is this phenomenon which makes MOSFETs of great interest in electronic applications.
The GP2M002A065CG MOSFET is a small-signal, high-efficiency, small signal power amplifier. It is composed of a gate, a source, a drain and a substrate, which includes the semiconductor material between the source and drain. When a voltage signal is applied to the gate, it produces a current flow between the source and drain, and this current flow is amplified.
The GP2M002A065CG offers a very efficient performance with low power consumption. The MOSFET can also perform under various temperature ranges from -55 to 150 degrees Celsius. The GP2M002A065CG is rated for a voltage of 10V and can handle up to 5A of current.
The GP2M002A065CG MOSFET is an important device for many applications. Its ability to control current flow and its efficient performance make it a versatile and useful component for modern electronics.
In conclusion, the GP2M002A065CG is a power amplifier MOSFET from Fuji Electric, often used for driving loudspeakers, acting as an audio power booster, or enabling motor control. This MOSFET offers efficient performance with low power consumption and is suitable for many applications. It is composed of a gate, a source, a drain and a substrate, which includes the semiconductor material between the source and drain, allowing the flow of current to be controlled when a voltage signal is applied to the gate.
The specific data is subject to PDF, and the above content is for reference
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