GP2M020A050H

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	290W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2880pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	44nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	300 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	18A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction:GP2M020A050H is a single, N-channel enhancement-mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is designed to provide high switching speed, low on-resistance, and fast on/off switching operation in order to maximize efficiency, performance, and design flexibility.Structure and Characteristics:GP2M020A050H consists of an N-channel source, gate, and drain structure, which is separated from the surface of the substrate by an oxide layer, giving it an insulated gate. This oxide layer is the only thing that separates the gate from the substrate. Since the charge carriers of the n-channel are electrons, the negative charge at the channel entrance reduces the energy barrier, making it easier for electrons to move through it. Due to its insulated-gate structure, it is also capable of generating small voltage and power losses. The source and drain of the MOSFET are formed in a single package, with the source connected to the substrate and the drain connected to the gate electrode. The channels are fully depleted, meaning that MOSFETs can be forced to turn off merely by cutting off the current supply. This makes them ideal for low-power applications where high efficiency is desired.GP2M020A050H also has a wide range of applications. Its low on-resistance and fast on/off switching operations make it ideal for use in circuits like switching power supplies, motor drives, etc. For high voltage applications, a dedicated number of mobility enhancements are provided to further reduce on-resistance and switching loss.Working Principle:GP2M020A050H operates on the principle of metal-oxide-semiconductor field-effect transistor (MOSFET). It is a semiconductor device with four terminals, namely the source (S), gate (G), drain (D) and substrate (B). When a voltage source is applied between source and drain, the voltage at the gate will cause the charge carriers in the N-channel to be attracted towards the gate, creating a thin layer of inversion layer of electrons.This inversion layer of charge carriers will reduce the electrical resistance between source and drain, hence allowing current to flow from source to drain. The gate voltage can be used to control the current flow. To turn off the current, the gate voltage needs to be set to zero, forcing the electrons away and creating an electrical insulating layer between source and drain. In this way, the GP2M020A050H can be used to control the current in a circuit.Conclusion:GP2M020A050H is a single, N-channel MOSFET with a wide range of applications. It has low on-resistance and fast on/off switching operations, making it ideal for low-power applications. It operates on the principle of metal-oxide-semiconductor field-effect transistor (MOSFET), where the gate voltage can be used to control the current flow through the device. It is a reliable and cost-effective solution for applications such as switching power supplies, motor drives, etc.

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