| Allicdata Part #: | GP2M004A065HG-ND |
| Manufacturer Part#: |
GP2M004A065HG |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Global Power Technologies Group |
| Short Description: | MOSFET N-CH 650V 4A TO220 |
| More Detail: | N-Channel 650V 4A (Tc) 98.4W (Tc) Through Hole TO-... |
| DataSheet: |  GP2M004A065HG Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 98.4W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 642pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2.4 Ohm @ 2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The GP2M004A065HG is a single FET MOSFET (Field Effect Transistor) which is an electronic semiconductor device that utilizes an electric field to control the behavior and flow of current within an electric circuit. It is a three-terminal device with a source, drain, and gate charge, and it is an important component in the production of advanced and modern electronic circuits.The GP2M004A065HG is a high-performance and high-reliability single FET MOSFET which has been specially designed and manufactured for use in the field of computer technology, communications, and consumer electronics. The device has a maximum drain current of 205A and is designed to operate at very low gate voltages, making it ideal for the construction of small and lightweight electronic circuits.The operation of the GP2M004A065HG is based on the principle of field effect transistors. A MOSFET is made up of two p-type and two n-type semiconductors which are connected to a gate. When a voltage is applied to the gate, a region of negative voltage is created between the source and drain and this causes a current to flow through the device. This current creates a field effect which can be used to control the flow of current through the device and hence the behavior of the circuit.The GP2M004A065HG is ideal for use in the construction of circuits which require a high level of reliability, a low gate input voltage, and high drain current capability. The device is also suitable for use in high-speed designs due to its enhanced switching performance. The device is ideal for use in a variety of applications including high-speed logic stepper motor control, radio frequency amplifiers, and many other switching devices.The GP2M004A065HG is a small and lightweight device which is easy to install and use. The device can be used in a wide variety of electronic circuits and is especially suitable for use in compact designs. The device is available in both through-hole and surface mount packages and is suitable for use in virtually any type of circuit design.Overall, the GP2M004A065HG is a single FET MOSFET that is ideal for use in the field of computer technology, communications, and consumer electronics. The device is highly reliable, has a low gate input voltage, and is capable of producing high drain current levels. The device is also suitable for use in high-speed designs and is easy to install and use.
The specific data is subject to PDF, and the above content is for reference
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