Allicdata Part #: | GP2M004A060FG-ND |
Manufacturer Part#: |
GP2M004A060FG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 600V 4A TO220F |
More Detail: | N-Channel 600V 4A (Tc) 30.4W (Tc) Through Hole TO-... |
DataSheet: | GP2M004A060FG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 30.4W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 545pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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GP2M004A060FG is a MOSFET that belongs to the category of transistors and FETs (field effect transistors). This MOSFET is considered a single MOSFET because it contains one MOSFET die (Metal Oxide Semiconductor Field-Effect Transistor). It is commonly used in high current, low voltage applications. It is also used in applications where low on-resistance and low capacitance are required.
GP2M004A060FG has a MOSFET die as mentioned before, which contains three terminals. The terminals are labeled as the Gate, Drain and Source. The Gate is the control terminal that determines whether or not there is current flow through the device. The Drain and Source terminals are used for the flow of current through the device when the Gate is turned on. The Gate, Drain and Source are all connected to the MOSFET die, and the connection between them is done with a metal oxide layer that acts as an insulator. This is what gives this MOSFET its name, as MOS stands for Metal Oxide Semiconductor.
The working principle of the GP2M004A060FG MOSFET is based on the field effect. When a voltage is applied to the Gate terminal, this generates an electric field that alters the characteristics of the metal oxide layer and allows current to pass through. This means that the current flow is controlled by the voltage applied to the Gate terminal. When the voltage to the Gate is increased, more current is allowed to flow through the device. When the voltage is decreased, the current flow is also decreased. This is why the GP2M004A060FG is ideal for high current, low voltage applications where precision voltage control is required.
The GP2M004A060FG MOSFET is typically used in applications such as power switching, signal switching, voltage regulation, and motor control. This MOSFET is also commonly used in applications that require precise control of current flow, such as in audio amplifiers. It is also frequently used in electronic test and measurement equipment, as well as in robotics.
The GP2M004A060FG MOSFET is a versatile and reliable device that is ideal for many applications where precision voltage control is required. Its ability to be controlled with precise voltage inputs makes it suitable for many different types of applications. It is also a reliable and durable device, as it can handle a variety of different voltages and currents without any issues. This makes it a popular choice in many different applications.
The specific data is subject to PDF, and the above content is for reference
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