Allicdata Part #: | GP2M008A060HG-ND |
Manufacturer Part#: |
GP2M008A060HG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 600V 7.5A TO220 |
More Detail: | N-Channel 600V 7.5A (Tc) 120W (Tc) Through Hole TO... |
DataSheet: | GP2M008A060HG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1063pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 3.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The GP2M008A060HG is a high-voltage field-effect transistor (FET) commonly used for high-voltage switching applications. FETs are a type of transistor that uses a variably doped gate structure to activate or deactivate a current conduction circuit between two terminals. FETs are frequently used to amplify or switch electronic signals, and the GP2M008A060HG is a high-performance variant capable of switching currents up to 60V.
The GP2M008A060HG is a single N-Channel FET in a TO-92 package. FETs come in two varieties, N-Channel and P-Channel with the N-channel specifically designed to switch high negative voltages. The GP2M008A060HG’s N-channel FET is ideal for switching off higher negative voltages between the Source and Drain circuits. As an enhancement-type FET, the GP2M008A060HG is normally on when not activated, and it is turned off when there is a positive voltage at the gate.
The high-voltage switching offered by the GP2M008A060HG makes it a great choice for automotive, power management, and low-voltage applications. The versatile switching offered by this FET makes it a great choice for various high-voltage switching applications such as motor control, switchmode power supplies, DC-DC converters, load switches, rectification control, power-over-Ethernet, and solar inverters. This makes the GP2M008A060HG a great choice for engineers when designing power supply systems of all shapes and sizes.
The GP2M008A060HG also has an excellent avalanche breakdown performance. The avalanche breakdown occurs when the Drain-Source voltage exceeds the breakdown voltage of the FET, which initiates current flow through the FET’s body diode. The GP2M008A060HG has an avalanche breakdown voltage of 150V and RDS(ON) of 0.16Ω and a maximum drain current of 4A. This makes it a great choice for applications requiring high current switching capabilities.
The GP2M008A060HG also has excellent thermal performance. Thermal performance is important for FETs since it determines how well the FET can dissipate heat. The GP2M008A060HG has an estimated thermal resistance of 5K/W, which means it can efficiently dissipate heat away from its surface. This is especially important for applications that require high-current switching.
Overall, the GP2M008A060HG is a great choice for high-voltage applications. Its over-voltage protection, high current switching capabilities and excellent thermal performance makes it an ideal choice for engineers designing switchmode power supply systems. It is also a great choice for automotive, power management and low-voltage applications due to its versatile switching capabilities.
The specific data is subject to PDF, and the above content is for reference
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