Allicdata Part #: | 1560-1205-5-ND |
Manufacturer Part#: |
GP2M008A060PGH |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 600V 7.5A IPAK |
More Detail: | N-Channel 600V 7.5A (Tc) 120W (Tc) Through Hole I-... |
DataSheet: | GP2M008A060PGH Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1063pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 3.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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GP2M008A060PGH application field and working principle
The GP2M008A060PGH is a MOSFET manufactured by Panasonic. It is a product of the "SuperGreen" series, which is specifically designed for use in information and communication equipment. This MOSFET is a single-chip power device that includes a source drain/gate circuit, allowing the device to reduce current consumption while achieving high-speed switching.
A MOSFET is an electronic device often used as a switch or amplifier, in which the gate terminal is insulated from the drain and source terminals by an oxide layer. It is a voltage-controlled device, meaning that it operates based on the voltage applied to its gate terminal. When a positive voltage is applied to the gate terminal, it creates an inversion layer, which channels the current between the drain and source terminals. This type of device is also known as a Field-Effect Transistor (FET).
The GP2M008A060PGH has a maximum collector current of 8A and a maximum total drain-source on-resistance (RDS(on)) of 0.06Ω. It features a low on-resistance that minimizes heat generation and power loss as well as a low gate charge (Qg) of 11nC, making it an ideal choice for high frequency switching applications. The device can be driven with either an N- or P-channel MOSFET, meaning it is suitable for a range of different applications.
The GP2M008A060PGH is widely used in the telecommunications and computer industries. It is especially suitable for circuits that require high-efficiency power conversion, such as DC/DC converters. It is also used in switching power supplies and other circuits with high-efficiency requirements. The device can also be used to control large loads, such as motors and lighting, where switching speed is not a critical factor.
The working principle of the GP2M008A060PGH is fairly simple. When a positive voltage is applied to its gate terminal, it creates a conduction path between the drain and the source, allowing current to flow between them. The gate-source voltage controls the size of the conduction path, and the drain-source voltage controls the amount of current that will flow through the device. By controlling the voltage applied to the gate and drain-source terminals, it is possible to precisely control the amount of current flowing between the drain and source.
The GP2M008A060PGH is an excellent choice for power supply circuits and power control applications, as it offers superior performance, higher efficiency, and a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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