GP2M010A060H Allicdata Electronics
Allicdata Part #:

GP2M010A060H-ND

Manufacturer Part#:

GP2M010A060H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Global Power Technologies Group
Short Description: MOSFET N-CH 600V 10A TO220
More Detail: N-Channel 600V 10A (Tc) 198W (Tc) Through Hole TO-...
DataSheet: GP2M010A060H datasheetGP2M010A060H Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 198W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 700 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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GP2M010A060H is a type of field effect transistor (FET) that uses metal oxide semiconductor (MOS) technology. The GP2M010A060H is packaged as a single MOSFET, which means that it includes just one transistor in its circuitry. The GP2M010A060H is often used in audio amplifiers and other audio circuitry, as well as in some power supplies.

Field effect transistors (FETs) are a type of transistor, which are semiconductor devices that work on the principle of controlling current flow. FETs, like other transistors, are formed from three types of layers of semiconductor material. These layers form two regions in the FET, called the source and the drain.

In a MOSFET, the source and the drain are formed from a single substrate material, known as a metal oxide, which is where the device gets its name. The controlling current flow is generated by a voltage applied to the gate terminal, which is connected to the third region (between the source and the drain) and effectively acts as the "gateway" to let current flow.

The GP2M010A060H uses this standard MOSFET design, but is specially designed to offer very low resistance (Rds(on)) between the source and the drain, making it an ideal transistor for audio applications. It also offers low capacitance and high frequency performance. This makes it a very attractive choice for audio amplifiers, as it is able to transmit a high current without adding noise or distortion.

The GP2M010A060H is also often used in power supplies, where it is used to regulate the voltage and current, providing better efficiency and performance. In these applications, the transistor is used to regulate the current, to ensure that the load is supported without excessive overloading.

The GP2M010A060H is a relatively simple MOSFET component, but it offers a variety of useful features that make it a great choice for audio and power applications. Its low resistance, low capacitance, and high frequency performance make it a great choice for audio amplifiers and power supplies, while its simple design makes it easy to integrate into most existing designs.

The specific data is subject to PDF, and the above content is for reference

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