GP2M010A060F Allicdata Electronics
Allicdata Part #:

1560-1206-5-ND

Manufacturer Part#:

GP2M010A060F

Price: $ 1.67
Product Category:

Discrete Semiconductor Products

Manufacturer: Global Power Technologies Group
Short Description: MOSFET N-CH 600V 10A TO220F
More Detail: N-Channel 600V 10A (Tc) 52W (Tc) Through Hole TO-2...
DataSheet: GP2M010A060F datasheetGP2M010A060F Datasheet/PDF
Quantity: 1
1 +: $ 1.50570
Stock 1Can Ship Immediately
$ 1.67
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 700 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
FET Feature: --
Power Dissipation (Max): 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
Description

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GP2M010A060F is an N-channel MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) device. It is usually used in DC/DC converters, power switches, and relays. GP2M010A060F is also used for high current switching applications. This device is capable of handling up to 600V and 10A of continuous personal current. Its fast switching speeds and low heat dissipation make it an ideal device for high-current and high-voltage applications.

The GP2M010A060F MOSFET is designed to be used in low-cost, high-efficiency DC/DC converters, power switches, and relays. As such, it is usually used in these types of application scenarios where the current and voltage requirements are relatively low. The main advantage of this device is its fast switching speed and low power dissipation.

The basic working principle of the GP2M010A060F is relatively simple. This device operates on a negative voltage input and its drain region is connected to a positive voltage source. When the negative voltage is applied to the gate of the GP2M010A060F, it induces an electric field across the source-drain region. This electric field modulates the current flowing through the source-drain region and thus controls the output current. The output current is proportional to the gate voltage applied to the GP2M010A060F.

The GP2M010A060F is also known for its high “on” resistance, meaning it can be used in applications requiring very high “on” resistance. This is an important feature for applications such as motor controllers, where high “on” resistance is crucial in maintaining voltage and current stability.

In summary, the GP2M010A060F is a cost-effective and high-efficiency MOSFET device designed to be used in DC/DC converters, power switches, and relays. Its low power-dissipation, fast switching speed, and high “on” resistance make it an ideal device for high-current and high-voltage applications.

The specific data is subject to PDF, and the above content is for reference

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