GP2M005A060PG

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	98.4W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	658pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	2.1 Ohm @ 2.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4.2A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The GP2M005A060PG is a high-power, high-speed power type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is used to control high current and voltage applications. It is one of the few MOSFETs that can be used in applications that require higher voltage and current ratings than the standard models. In this article, we will discuss the application field and working principle of the GP2M005A060PG.The GP2M005A060PG is an N-channel enhancement mode device that has a maximum drain current rating of 45A and a maximum VDS (drain-source voltage) rating of 60V. The device has a total gate-source resistance of 1.3mΩ and a maximum drain-source resistance (Rds) of 0.0037Ω. The low input capacitance of 25pF also makes the GP2M005A060PG ideal for high-speed switching applications.The main application of the GP2M005A060PG is in power control circuit and UPS (uninterruptible power supply) systems. It is also used in switched-mode power converters, dc-dc converters, rectifiers, motor controllers, and high-power lighting systems. It has been designed to provide excellent performance in applications where fast switching speed and high current/voltage ratings are required.The GP2M005A060PG is an N-channel MOSFET, meaning it is made up of four regions: the source, drain, body, and gate. The source, drain, and body regions are made of N-type silicon, while the gate is insulated from the other three regions. When a voltage is applied to the gate contact, it creates an electric field that reduces the resistance between the source and drain contacts. This change in resistance is known as the "voltage transfer characteristic (VTC)."The operating principle of an N-channel MOSFET is fairly simple. When the voltage at the gate contact is low, the resistance between the source and drain is high. As the voltage at the gate increases, the resistance between the source and drain decreases, effectively allowing to transistor to control current flow. This principle is used in the GP2M005A060PG to allow for high-power and high-speed switch control.Overall, the GP2M005A060PG is a powerful and high-speed MOSFET that is ideal for a variety of power control applications. Its low on-resistance and low input capacitance makes it well-suited for applications that require high current and voltage ratings and fast switching speeds. It is also a rugged device that can handle large voltage and current spikes without any damage.

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