Allicdata Part #: | GP2M009A090NG-ND |
Manufacturer Part#: |
GP2M009A090NG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Global Power Technologies Group |
Short Description: | MOSFET N-CH 900V 9A TO3PN |
More Detail: | N-Channel 900V 9A (Tc) 312W (Tc) Through Hole TO-3... |
DataSheet: | GP2M009A090NG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 312W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2740pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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GP2M009A090NG is a N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) , specifically a single field effect transistor. It belongs to the wide family of FETs.
The GP2M009A090NG is primarily used for applications that require very low on-state resistance, low threshold voltage, and low capacitance. Examples include high speed switching and linear amplifiers in instrumentations, automotive electronics, and consumer electronics.
The working principle of the GP2M009A090NG is based on the electrical field control of current. The gate terminal, which is insulated by an oxide layer, controls the behavior of the channel by inducing an electric field. When a voltage is applied to the gate terminal, it reduces the electric field of the channel, increasing the current and voltage of the conductive channel, allowing electrons to flow freely through it. When the gate terminal is connected to a signal source, the resistance can be easily switched between high and low states. This is done by controlling the electric field with the voltage supplied to the signal source.
The GP2M009A090NG has several advantages over other transistors such as bipolar junction transistors and SCRs (silicon controlled rectifiers). These advantages are low power consumption, low cost, and high speed. The FET can be easily switched on and off with a signal, and it is also extremely reliable. Additionally, the amount of power required for operation is much less than other comparable transistors, making them ideal for high-speed digital circuits.
The GP2M009A090NG has many applications in the consumer electronics, instrumentation, and automotive electronics sectors. Its very low on-state resistance and low capacitance make it perfect for use in high speed switching and linear amplifiers, as well as a wide range of other applications. For example, it can be used in the switching of automotive relays, the protection of circuit breakers, and the protection of sensitive electronics in high-temperature environments.
In conclusion, the GP2M009A090NG is a versatile N-Channel MOSFET which provides a low on-state resistance and low threshold voltage, while allowing high-speed operation. Its many features make it suitable for a wide range of applications, including high speed switching and linear amplifiers in instrumentation, automotive electronics, and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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